Ferromagnetism, variable range hopping and anomalous Hall effect in epitaxial Co:ZnO thin film

doi:10.1088/1674-1056/21/10/107201

Abstract A series of high quality single crystalline epitaxial Zn_0.95Co_0.05O thin films is prepared by molecular beam epitaxy. Superparamagnetism and ferromagnetism are observed when the donor density is manipulated in a range of 10¹⁸ cm^-3-10²⁰ cm^-3 by changing the oxygen partial pressure during film growth. The conduction shows variable range hopping at low temperature and thermal activation conduction at high temperature. The ferromagnetism can be maintained up to room temperature. However, the anomalous Hall effect is observed only at low temperature and disappears above 160 K. This phenomenon can be attributed to the local ferromagnetism and the decreased optimal hopping distance at high temperatures.

Keywords: ZnCoO variable range hopping anomalous Hall effect

Received: 09 February 2012
Revised: 01 April 2012
Accepted manuscript online:

PACS:	72.20.-i	(Conductivity phenomena in semiconductors and insulators)
	72.25.Dc	(Spin polarized transport in semiconductors)

Fund: Project supported by the State Key Project of Fundamental Research of China (Grant No. 2009CB929202) and the National Natural Science Foundation of China (Grant Nos. 10834001 and 51125004).

Corresponding Authors: Liu Guo-Lei
E-mail: liu-guolei@sdu.edu.cn

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Bai Hong-Liang (白洪亮), He Shu-Min (贺树敏), Xu Tong-Shuai (徐同帅), Liu Guo-Lei (刘国磊), Yan Shi-Shen (颜世申), Zhu Da-Peng (朱大鹏), Dai Zheng-Kun (代正坤), Yang Feng-Fan (杨丰帆), Dai You-Yong (代由勇), Chen Yan-Xue (陈延学), Mei Liang-Mo (梅良模) Ferromagnetism, variable range hopping and anomalous Hall effect in epitaxial Co:ZnO thin film 2012 Chin. Phys. B 21 107201

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Ferromagnetism, variable range hopping and anomalous Hall effect in epitaxial Co:ZnO thin film

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