The effects of electric and magnetic fields on the current spin polarization and magnetoresistance in a ferromagnetic/organic semiconductor/ferromagnetic (FM/OSC/FM) system

doi:10.1088/1674-1056/21/10/108508

Abstract From experimental results of spin polarized injection and transport in organic semiconductors (OSCs), we theoretically study the current spin polarization and magnetoresistance under an electric and a magnetic field in a ferromagnetic/organic semiconductor/ferromagnetic (FM/OSC/FM) sandwich structure according to the spin drift-diffusion theory and Ohm's law. From the calculations, it is found that the interfacial current spin polarization is enhanced by several orders of magnitude through tuning the magnetic and electric fields by taking into account the specific characteristics of OSC. Furthermore, the effects of the electric and magnetic fields on the magnetoresistance are also discussed in the sandwich structure.

Keywords: organic spintronics spin diffusion and drift current spin polarization magnetoresistance

Received: 22 December 2011
Revised: 21 May 2012
Accepted manuscript online:

PACS:	85.75.-d	(Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)
	72.25.Dc	(Spin polarized transport in semiconductors)
	72.25.Mk	(Spin transport through interfaces)
	75.47.-m	(Magnetotransport phenomena; materials for magnetotransport)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 10904083 and 10904084), the Shandong Provincial Distinguished Middle-Aged and Young Scientist Encourage and Reward Foundation, China (Grant No. BS2009CL008), and the Science and Technology Foundation for Institution of Higher Education of Shandong Province, China (Grant No. J09LA03).

Corresponding Authors: Ren Jun-Feng
E-mail: renjf@sdnu.edu.cn

Cite this article:

Wang Yu-Mei (王玉梅), Ren Jun-Feng (任俊峰), Yuan Xiao-Bo (原晓波), Dou Zhao-Tao (窦兆涛), Hu Gui-Chao (胡贵超) The effects of electric and magnetic fields on the current spin polarization and magnetoresistance in a ferromagnetic/organic semiconductor/ferromagnetic (FM/OSC/FM) system 2012 Chin. Phys. B 21 108508

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The effects of electric and magnetic fields on the current spin polarization and magnetoresistance in a ferromagnetic/organic semiconductor/ferromagnetic (FM/OSC/FM) system

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