Structural and band tail state photoluminescence properties of amorphous SiC films with different amounts of carbon

doi:10.1088/1674-1056/21/10/107802

Abstract Amorphous silicon carbide films are deposited by the plasma enhanced chemical vapour deposition technique, and optical emissions from the near-infrared to the visible are obtained. The optical band gap of the films increases from 1.91 eV to 2.92 eV by increasing the carbon content, and the photoluminescence (PL) peak shifts from 1.51 eV to 2.16 eV. The band tail state PL mechanism is confirmed by analysing the optical band gap, PL intensity, the Stocks shift of the PL, and the Urbach energy of the film. The PL decay times of the samples are in the nanosecond scale, and the dependence of the PL lifetime on the emission energy also supports that the optical emission is related to the radiative recombination in the band tail state.

Keywords: amorphous silicon carbide band tail state photoluminescence time-resolved photoluminescence

Received: 21 March 2012
Revised: 08 May 2012
Accepted manuscript online:

PACS:	78.66.Jg	(Amorphous semiconductors; glasses)
	78.55.-m	(Photoluminescence, properties and materials)
	78.47.jd	(Time resolved luminescence)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60878040) and the Natural Science Foundation of Hebei Province, China (Grant Nos. F2012201007 and F2012201042).

Corresponding Authors: Wang Xin-Zhan
E-mail: xinzhan_wang@126.com

Cite this article:

Fu Guang-Sheng (傅广生), Wang Xin-Zhan (王新占), Lu Wan-Bing (路万兵), Dai Wan-Lei (戴万雷), Li Xing-Kuo (李兴阔), Yu Wei (于威) Structural and band tail state photoluminescence properties of amorphous SiC films with different amounts of carbon 2012 Chin. Phys. B 21 107802

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Structural and band tail state photoluminescence properties of amorphous SiC films with different amounts of carbon

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