High-field-induced electron detrapping in An AlGaN/GaN high electron mobility transistor

doi:10.1088/1674-1056/21/10/108503

Abstract A step stress test is carried out to study the reliability characteristics of an AlGaN/GaN high electron mobility transistor (HEMT). An anomalous critical drain-to-gate voltage with a negative temperature coefficient is observed in the stress sequence, beyond which the HEMT device starts to recover from degradation induced by early lower voltage stress. While the performance degradation featuring the drain current slump stems from electron trapping in the surface or bulk states during low-to-medium bias stress, the recovery is attributed to high field induced electron detrapping. The carrier detrapping mechanism could be helpful for lessening the trapping-related performance degradation of a GaN-based HEMT.

Keywords: AlGaN/GaN HEMT step stress test high electric field electron detrapping

Received: 02 March 2012
Revised: 11 April 2012
Accepted manuscript online:

PACS:	85.30.Tv	(Field effect devices)
	77.84.Bw	(Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)
	73.61.Ey	(III-V semiconductors)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

Corresponding Authors: Lu Hai
E-mail: hailu@nju.edu.cn

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Fu Li-Hua (付立华), Lu Hai (陆海), Chen Dun-Jun (陈敦军), Zhang Rongm (张荣), Zheng You-Dou (郑有炓), Wei Ke (魏珂), Liu Xin-Yu (刘新宇) High-field-induced electron detrapping in An AlGaN/GaN high electron mobility transistor 2012 Chin. Phys. B 21 108503

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High-field-induced electron detrapping in An AlGaN/GaN high electron mobility transistor

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