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Chin. Phys. B, 2012, Vol. 21(9): 097105    DOI: 10.1088/1674-1056/21/9/097105
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Current transport in ZnO/Si heterostructure grown by laser molecular beam epitaxy

Teng Xiao-Yun (滕晓云), Wu Yan-Hua (吴艳华), Yu Wei (于威), Gao Wei (高卫), Fu Guang-Sheng (傅广生)
College of Physics Science and Technology, University of Hebei University, Baoding 071002, China
Abstract  The n-ZnO/p-Si heterojunction was fabricated by depositing high quality single crystalline aluminium-doped n-type ZnO film on p-type Si using the laser molecular beam epitaxy technique. The heterojunction exhibited a good rectifying behavior. The electrical properties of the heterojunction were investigated by means of temperature dependence current density-voltage measurements. The mechanism of the current transport was proposed based on the band structure of the heterojunction. When the applied bias V is lower than 0.15 V, the current follows the Ohmic behavior. When 0.15 V < V < 0.6 V, the transport property is dominated by diffusion or recombination in the junction space charge region, while at higher voltages (V >0.6 V), the space charge limited effect becomes the main transport mechanism. The current-voltage characteristic under illumination was also investigated. The photovoltage and the short circuit current density of the heterojunction aproached 270 mV and 2.10 mA/cm2, respectively.
Keywords:  ZnO/Si heterostructure      current transport      laser molecular beam epitaxy  
Received:  29 December 2011      Revised:  21 February 2012      Accepted manuscript online: 
PACS:  71.55.Gs (II-VI semiconductors)  
  73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  81.15.Fg (Pulsed laser ablation deposition)  
Fund: Project supported by the Postdoctor Foundation of Hebei Province, China, the Natural Science Foundation of Hebei Province, China (Grant No. F2012201093), and the Natural Science Foundation of Hebei University, China (Grant No. 2008127).
Corresponding Authors:  Teng Xiao-Yun     E-mail:  xyteng@hbu.edu.cn

Cite this article: 

Teng Xiao-Yun (滕晓云), Wu Yan-Hua (吴艳华), Yu Wei (于威), Gao Wei (高卫), Fu Guang-Sheng (傅广生) Current transport in ZnO/Si heterostructure grown by laser molecular beam epitaxy 2012 Chin. Phys. B 21 097105

[1] Ryu Y R, Lee T S, Lubguban J A, White H W, Kim B J, Park Y S and Youn C J 2006 Appl. Phys. Lett. 88 241108
[2] Li S S, Zhang Z, Hang J Z, Feng X P and Liu R X 2011 Acta Phy. Sin. 60 127102 (in Chinese)
[3] Huang J Z, Li S S and Feng X P 2010 Acta Phy. Sin. 59 5839 (in Chinese)
[4] Tsay C Y, Fan K S, Chen S H and Tsai C H 2010 Journal of Alloys and Compounds 495 126
[5] Ma Y, Du G T, Yang S R, Li Z T, Zhao B J, Yang X T, Yang T P, Zhang Y T and Liu D L 2004 J. Appl. Phys. 95 6268
[6] Izaki M, Shinagawa T, Mizuno K T, Ida Y, Inaba M and Tasaka A 2007 J. Phys. D: Appl. Phys. 40 3326
[7] Yuen C, Yu S F, Rusli L S P and Chen T P 2005 Appl. Phys. Lett. 86 241111
[8] Ku C S, Huang J M, Cheng C Y, Lin C M and Lee H Y 2010 Appl. Phys. Lett. 97 181915
[9] Mridha S and Basak D 2007 J. Appl. Phys. 101 083102
[10] You J B, Zhang X W, Zhang S G, Tan H R, Ying J, Yin Z G, Zhu Q S and Chu P K 2010 J. Appl. Phys. 107 083701
[11] Ibrahim A A and Ashour A 2006 Journal of Materials Science: Materials in Electronics 17 835
[12] Park C H, Jeong I S, Kim J H and Ima S 2003 Appl. Phys. Lett. 82 3973
[13] Vanheusden K, Warren W L, Seager C H, Tallant D R, Voigt J A and Gnade B E 1996 J. Appl. Phys. 79 7983
[14] Kim K K, Tampo H, Song J O, Seong T Y, Park S J, Lee J M, Kim S W, Fujita S and Niki S 2005 Jpn. J. Appl. Phys. 44 4776
[15] Chen X D, Ling C C, Fung S, Beling C D, Mei Y F, Fu Ricky K Y, Siu G G and Chu P K 2006 Appl. Phys. Lett. 88 132104
[16] Streetman B G and Banerjee S K 2010 Solid State Electronic Devices (6th edn.) (New Jersey: Pearson) p. 221
[17] Sah C, Noyce R N and Shockley W 1957 Proc. IRE 45 1228
[18] Lee J D, Park C Y, Kim H S, Lee J J and Choo Y G 2010 J. Phys. D: Appl. Phys. 43 365403
[19] Marsh O J and Viswanathan C R 1967 J. Appl. Phys. 38 3135
[20] Tehrani S, Kim J S, Hench L L, Van Vilet C M and Bosman G 1985 J. Appl. Phys. 58 1562
[21] Hall H P, Awaah M A and Das K 2004 Phys. Status Solidi A 201 522
[22] Hoffman R L, Wagner J F, Jayaraj M K and Tate J 2001 J. Appl. Phys. 90 5763
[23] Jeong I S, Kim J H and Im S 2003 Appl. Phys. Lett. 83 2946
[24] Lee J Y, Choi Y S, Kim J H, Park M O and Im S 2002 Thin Solid Films 403-404 553
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