Relative enhancement of photoluminescence intensity of passivated silicon nanocrystals in silicon dioxide matrix

doi:10.1088/1674-1056/21/9/097804

Abstract Photoluminescence (PL) intensity of passivated silicon nanocrystals (Si NCs) embeded in an SiO₂ matrix is compared with that of unpassivated ones. We investigate the relative enhancement of PL intensity (I_R) as a function of annealing temperature and implanted Si ion dose. The I_R increases simultaneously with the annealing temperature. This demonstrates an increase in the number of dangling bonds (DBs) with the degree of Si crystallization via varying the annealing temperature. The increase in I_R with implanted Si ion dose is also observed. We believe that the near-field interaction between DBs and neighboring Si NCs is an additional factor that reduces the PL efficiency of unpassivated Si NCs.

Keywords: ion implantation nanocrystals photoluminescence dangling bond

Received: 09 December 2011
Revised: 18 April 2012
Accepted manuscript online:

PACS:	78.67.-n	(Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)
	81.40.Tv	(Optical and dielectric properties related to treatment conditions)
	68.65.-k	(Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)

Fund: Project supported by the State Key Laboratory of Nuclear Physics and Technology, China.

Corresponding Authors: Wu Zhi-Yong
E-mail: zywu75@pku.edu.cn

Cite this article:

Wu Zhi-Yong (吴志永), Liu Ke-Xin (刘克新), Ren Xiao-Tang (任晓堂) Relative enhancement of photoluminescence intensity of passivated silicon nanocrystals in silicon dioxide matrix 2012 Chin. Phys. B 21 097804

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Relative enhancement of photoluminescence intensity of passivated silicon nanocrystals in silicon dioxide matrix

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