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Chin. Phys. B, 2012, Vol. 21(9): 096101    DOI: 10.1088/1674-1056/21/9/096101
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Influence of defect states on band gaps in the two-dimensional phononic crystal of 4340 steel in an epoxy

Kong Xiao-Yan (孔肖燕), Yue Lei-Lei (岳蕾蕾), Chen Yu (陈雨), Liu Ying-Kai (刘应开)
Institute of Physics and Electronic Information, Yunnan Normal University, Kunming 650092, China
Abstract  The band structures of a new two-dimensional triangle-shaped array geometry of 4340 steel cylinders of square cross section into epoxy resin were studied by the plane-wave expansion and supercell calculation method. The band gaps of this type of phononic crystals with different defects were calculated such as defect-free, 60° crystal linear defect states, 120° crystal linear defect states, and 180° crystal linear defect states. It was found that the band gap will emerge in different linear defects of the phononic crystals and the bandwidth of linear defect states is larger than that of the free-defect crystal by about 2.14 times within the filling fraction F=0.1-0.85. In addition, the influence of filling fraction on the relative width of the minimum band gap is discussed.
Keywords:  defect state      band width      number of band gap  
Received:  28 December 2011      Revised:  24 April 2012      Accepted manuscript online: 
PACS:  61.50.Lt (Crystal binding; cohesive energy)  
  61.72.-y (Defects and impurities in crystals; microstructure)  
  62.65.+k (Acoustical properties of solids)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 10764005 and 11164034) and the New Century Training Program Foundation for Talents from the Ministry of Education of China (Grant No. NCET-08-0926).
Corresponding Authors:  Liu Ying-Kai     E-mail:  liuyingkai99@163.com

Cite this article: 

Kong Xiao-Yan (孔肖燕), Yue Lei-Lei (岳蕾蕾), Chen Yu (陈雨), Liu Ying-Kai (刘应开) Influence of defect states on band gaps in the two-dimensional phononic crystal of 4340 steel in an epoxy 2012 Chin. Phys. B 21 096101

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