Fabrication and characterization of 4H–SiC bipolar junction transistor with double base epilayer

doi:10.1088/1674-1056/21/8/088502

Abstract In this paper we report on a novel structure of 4H-SiC bipolar junction transistor with a double base epilayer that is continuously grown. The measured dc common-emitter current gain is 16.8 at I_C=28.6 mA (J_C=183.4 A/cm²), and it increases with the collector current density increasing. The specific on-state resistance (R_sp-on) is 32.3 mΩ·cm² and the open-base breakdown voltage reaches 410 V. The emitter N-type specific contact resistance and N⁺ emitter layer sheet resistance are 1.7× 10^{-3 Ω·cm² and 150} Ω /□, respectively.

Keywords: 4H-SiC bipolar junction transistors common-emitter current gain specific on-resistance open-base breakdown voltage

Received: 08 December 2011
Revised: 13 January 2012
Accepted manuscript online:

PACS:	85.30.Pq	(Bipolar transistors)
	51.50.+v	(Electrical properties)
	78.40.Fy	(Semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60876061) and the National Defense Key Laboratory Foundation from Nanjing National Defense Key Laboratory of Nanjing Electronic Devices Institute, China (Grant No. 20090C1403).

Corresponding Authors: Zhang Qian
E-mail: zhangqian4213@126.com

Cite this article:

Zhang Qian (张倩), Zhang Yu-Ming (张玉明), Yuan Lei (元磊), Zhang Yi-Men (张义门), Tang Xiao-Yan (汤晓燕), Song Qing-Wen (宋庆文 ) Fabrication and characterization of 4H–SiC bipolar junction transistor with double base epilayer 2012 Chin. Phys. B 21 088502

[1]	Sumi K, Anant A, Ryu S H, Craig C, James R, John P, Santosh B, Paul C T, Stephen B, Bruce G, Kenneth J and Charles S 2005 IEEE Electron Dev. Lett. 26 175
[2]	Zhang J H, Alexandrov P, Burke T and Zhao J H 2006 IEEE Electron Dev. Lett. 27 368
[3]	Balachandran S, Chow T P, Agarawal A, Scozzie C and Jones K A 2005 IEEE Electron Dev. Lett. 26 470
[4]	Domeij M, Lee H S, Danielsson E, Zetterling C M, Östling M and Schoner A 2005 IEEE Electron Dev. Lett. 26 743
[5]	Zhang Q, Zhang Y M and Zhang Y M 2009 J. Semicond. 30 094003
[6]	Zhang Q, Zhang Y M and Zhang Y M and Wang Y H 2010 J. Semicond. 31 114005
[7]	Zhang Q, Zhang Y M and Zhang Y M 2010 J. Semicond. 31 074007

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Fabrication and characterization of 4H–SiC bipolar junction transistor with double base epilayer

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