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Chin. Phys. B, 2012, Vol. 21(8): 088501    DOI: 10.1088/1674-1056/21/8/088501
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Degradation of the transconductance of gate-modulated generation current in nMOSFET

Chen Hai-Feng (陈海峰), Guo Li-Xin (过立新), Du Hui-Min (杜慧敏 )
School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121, China
Abstract  The degradation of transconductance (G) of gate-modulated generation current IGD in LDD nMOSFET is investigated. The G curve shifts rightward under the single electron-injection-stress (EIS). The trapped electrons located in the gate oxide over the LDD region (QL) makes the effective drain voltage minish. Accordingly, the G peak in depletion (GMD) and that in weak inversion (GMW) decrease. It is found that Δ GMD and Δ GMW each have a linear relationship with the n-th power of stress time (tn) in dual-log coordinate: Δ GMD ∝ tn, Δ GMDtn (n=0.25). During the alternate stress, the injected holes neutralize QL induced by the previous EIS. This neutralization makes the effective VD restore to the initial value and then the IGD peak recovers completely. Yet the threshold voltage recovery is incomplete due to the trapped electron located over the channel (QC). As a result, GMW only recovers to the circa 50% of the initial value after the hole-injection-stress (HIS). Instead, GMD is almost recovered. The relevant mechanisms are given in detail.
Keywords:  generation current      transconductance      electron injection      alternate stress      degradation  
Received:  15 January 2012      Revised:  27 April 2012      Accepted manuscript online: 
PACS:  85.30.De (Semiconductor-device characterization, design, and modeling)  
  85.30.Tv (Field effect devices)  
Fund: Project supported by the Shaanxi Provincial Research Project of Education Department, China (Grant No. 11JK0902) and the Xi'an Municipal Applied Materials Innovation Fund, China (Grant No. XA-AM-201012).
Corresponding Authors:  Chen Hai-Feng     E-mail:  chenhaifeng@xupt.edu.cn

Cite this article: 

Chen Hai-Feng (陈海峰), Guo Li-Xin (过立新), Du Hui-Min (杜慧敏 ) Degradation of the transconductance of gate-modulated generation current in nMOSFET 2012 Chin. Phys. B 21 088501

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