Formations and morphological stabilities of ultrathin CoSi2 films

doi:10.1088/1674-1056/21/8/087304

Abstract In this paper we investigate the formations and morphological stabilities of Co-silicide films using 1-8-nm thick Co layers sputter-deposited on silicon (100) substrates. These ultrathin Co-silicide films are formed via solid-state reaction of the deposited Co films with Si substrate at annealing temperatures from 450 ℃ to 850 ℃. For Co layer with a thickness no larger than 1 nm, epitaxially aligned CoSi₂ films readily grow on silicon (100) substrate and exhibit good morphological stabilities up to 600 ℃. For Co layer thicker than 1 nm, polycrystalline CoSi and CoSi₂ films are observed. The critical thickness below which epitaxially aligned CoSi₂ film prevails is smaller than the reported critical thickness of Ni layer for epitaxial alignment of NiSi₂ on silicon (100) substrate. The larger lattice mismatch between CoSi₂ film and silicon substrate is the root cause for the smaller critical thickness of the Co layer.

Keywords: silicide epitaxial alignment ultrathin film

Received: 22 December 2011
Revised: 19 March 2012
Accepted manuscript online:

PACS:	73.30.+y	(Surface double layers, Schottky barriers, and work functions)
	68.35.Dv	(Composition, segregation; defects and impurities)
	85.40.Ls	(Metallization, contacts, interconnects; device isolation)

Fund: Project supported by the "China National Science and Technology Major Project 02" (Grant No. 2009ZX02035-003), the National Natural Science Foundation of China (Grant No. 61176090), and the Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning.

Corresponding Authors: Wu Dong-Ping
E-mail: dongpingwu@fudan.edu.cn

Cite this article:

Zhu Zhi-Wei (朱志炜), Gao Xin-Dong (高歆栋), Zhang Zhi-Bin (张志滨), Piao Ying-Hua (朴颖华), Hu Cheng (胡成), Zhang David-Wei (张卫), Wu Dong-Ping (吴东平 ) Formations and morphological stabilities of ultrathin CoSi₂ films 2012 Chin. Phys. B 21 087304

[1]	An X, Fan C H, Huang R, Guo Y, Xu C and Zhang X 2009 Chin. Phys. B 18 4465
[2]	Luo J, Qiu Z J, Zha C L, Zhang Z, Wu D, Lu J, Åerman J, Ötling M, Hultman L and Zhang S L 2010 Appl. Phys. Lett. 96 031911
[3]	Zhang Z, Zhang S L, Yang B, Zhu Y, Rossnagel S M, Gaudet S, Kellock A J, Jordan-Sweet J and Lavoie C 2010 Appl. Phys. Lett. 96 071915
[4]	Massalski T B 1986 Binary Alloy Phase Diagrams (Metal Park, Ohio: American Society for Metals)
[5]	D'Heurle F M and Gas P 1986 J. Mater. Res. 1 205
[6]	Lu J, Luo J, Zhang S L, Ötling M and Hultman L 2010 Electrochem. Solid-State Lett. 13 H360
[7]	Wei C S, Fraser D B, Dass M L and Brat T 1990 VII International IEEE VLSI Multilevel Interconnection Conference June 12-13, Santa clara, USA, p. 233
[8]	Gallego J M and Miranda R 1990 Surfance Science (Amsterdam: North Holland) p. 203
[9]	Zhang S L and D'Heurle F M 1999 Proceedings of the 16th Course of the International School of Solid State Physics Erice, Italy, p. 349
[10]	Hwang I Y, Kim J H, Oh S K, Kang H J and Lee Y S 2003 Surf. Interface Anal. 35 184
[11]	Gao X, Andersson J, Kubart T, Nyberg T, Smith U, Lu J, Hultman L, Kellock A J, Zhang Z, Lavoie C and Zhang S L 2011 Electrochem. Solid-State Lett. 14 H268
[12]	Keyser K, Bockstael C, Meirhaeghe R L, Detavernier C, Verleysen E, Bender H, Vandervorst W, Jordan-Sweet J and Lavoie C 2010 Appl. Phys. Lett. 96 173503
[13]	Tung R T 1992 Mater. Chem. Phys. 32 107
[14]	Smeets D, Vantomme A, Keyser K D, Detavernier C and Lavoie C 2008 J. Appl. Phys. 103 063506
[15]	Zhang S L, Cardenas J, D'Heurle F M, Svensson B G and Petersson C S 1995 Appl. Phys. Lett. 66 58
[16]	Li Q, Yu Y H, Bhatia C S, Marks L D, Lee S C and Chung Y W 2000 J. Vac. Sci. Technol. A 18 2333
[17]	Zhao J, Ballast L K, Hossain T Z, Trostel R E and Bridgman W C 2000 J. Vac. Sci. Technol. A 18 1690
[18]	Lee P S, Mangelinck D, Pey K L, Shen Z X, Ding J, Osipowicz T and See A 2000 Electrochem. Solid State Lett. 3 153
[19]	Deboer F R, Boom R, Mattens W C, Miedema A R and Niessen A K 1988 Cohesion in Metals: Transition Metal Alloys (Amsterdam: North Holland) p. 274
[20]	Tu K N, Chu W K and Mayer J 1975 Thin Solid Films 25 403
[21]	D'Heurle F M 1988 J. Mater. Res. 3 167

[1]	Impact of Al addition on the formation of Ni germanosilicide layers under different temperature annealing Xiao-Ran Meng(孟骁然), Yun-Xia Ping(平云霞), Wen-Jie Yu(俞文杰), Zhong-Ying Xue(薛忠营), Xing Wei(魏星), Miao Zhang(张苗), Zeng-Feng Di(狄增峰), Bo Zhang(张波), Qing-Tai Zhao(赵清太). Chin. Phys. B, 2017, 26(9): 098503.
[2]	Structural stability of ultra-high temperature refractory material MoSi₂ and Mo₅Si₃ under high pressure Hao Liang(梁浩), Fang Peng(彭放), Cong Fan(樊聪), Qiang Zhang(张强), Jing Liu(刘景), Shi-Xue Guan(管诗雪). Chin. Phys. B, 2017, 26(5): 053101.
[3]	Crystallization behaviors of ultrathin Al-doped HfO₂ amorphous films grown by atomic layer deposition Xue-Li Ma(马雪丽), Hong Yang(杨红), Jin-Juan Xiang(项金娟), Xiao-Lei Wang(王晓磊), Wen-Wu Wang(王文武), Jian-Qi Zhang(张建齐), Hua-Xiang Yin(殷华湘), Hui-Long Zhu(朱慧珑), Chao Zhao(赵超). Chin. Phys. B, 2017, 26(2): 027701.
[4]	Manipulating magnetic anisotropies of Co/MgO(001) ultrathin films via oblique deposition Syed Sheraz Ahmad, Wei He(何为), Jin Tang(汤进), Yong Sheng Zhang(张永圣), Bo Hu(胡泊), Jun Ye(叶军), Qeemat Gul, Xiang-Qun Zhang(张向群), Zhao-Hua Cheng(成昭华). Chin. Phys. B, 2016, 25(9): 097501.
[5]	Composition and temperature dependences of site occupation for Al, Cr, W, and Nb in MoSi₂ Li Xiao-Ping (李小平), Sun Shun-Ping (孙顺平), Yu Yun (于赟), Wang Hong-Jin (王洪金), Jiang Yong (江勇), Yi Dan-Qing (易丹青). Chin. Phys. B, 2015, 24(12): 120502.
[6]	Structural, elastic, and electronic properties of recently discovered ternary silicide superconductor Li₂IrSi₃: An ab-initio study M. A. Hadi, M. A. Alam, M. Roknuzzaman, M. T. Nasir, A. K. M. A. Islam, S. H. Naqib. Chin. Phys. B, 2015, 24(11): 117401.
[7]	Magnetic anisotropy and magnetization reversal of ultrathin iron films with in-plane magnetization on Si(111) substrates Liu Hao-Liang(刘郝亮), He Wei(何为), Du Hai-Feng(杜海峰), Fang Ya-Peng(房亚鹏), Wu Qiong(吴琼), Zhang Xiang-Qun(张向群), Yang Hai-Tao(杨海涛), and Cheng Zhao-Hua(成昭华) . Chin. Phys. B, 2012, 21(7): 077503.
[8]	Atomic diffusion in annealed Cu/SiO₂/Si (100) system prepared by magnetron sputtering Cao Bo(曹博), Jia Yan-Hui(贾艳辉), Li Gong-Ping(李公平), and Chen Xi-Meng(陈熙萌). Chin. Phys. B, 2010, 19(2): 026601.
[9]	The modulation of Schottky barrier height of NiSi/n-Si Schottky diodes by silicide as diffusion source technique An Xia(安霞), Fan Chun-Hui(范春晖), Huang Ru(黄如), Guo Yue(郭岳), Xu Cong(徐聪), Zhang Xing(张兴), and Wang Yang-Yuan(王阳元). Chin. Phys. B, 2009, 18(10): 4465-4469.
[10]	The fabrication of nickel silicide ohmic contacts to n-type 6H-silicon carbide Guo Hui(郭辉), Zhang Yi-Men(张义门), Qiao Da-Yong(乔大勇), Sun Lei(孙磊), and Zhang Yu-Ming(张玉明). Chin. Phys. B, 2007, 16(6): 1753-1756.
[11]	Schottky barrier MOSFET structure with silicide source/drain on buried metal Li Ding-Yu(李定宇), Sun Lei(孙雷), Zhang Sheng-Dong (张盛东), Wang Yi(王漪), Liu Xiao-Yan(刘晓彦), and Han Ru-Qi(韩汝琦). Chin. Phys. B, 2007, 16(1): 240-244.
[12]	Nickel-disilicide-assisted excimer laser crystallization of amorphous silicon Liao Yan-Ping (廖燕平), Shao Xi-Bin (邵喜斌), Gao Feng-Li (郜峰利), Luo Wen-Sheng (骆文生), Wu Yuan (吴渊), Fu Guo-Zhu (付国柱), Jing Hai (荆海), Ma Kai (马凯). Chin. Phys. B, 2006, 15(6): 1310-1314.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Formations and morphological stabilities of ultrathin CoSi2 films

Cite this article:

Online attention

Formations and morphological stabilities of ultrathin CoSi₂ films