Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers

doi:10.1088/1674-1056/21/6/068506

Abstract InGaN-based light-emitting diodes with p-GaN and p-AlGaN hole injection layers are numerically studied using the APSYS simulation software. The simulation results indicate that light-emitting diodes with p-AlGaN hole injection layers show superior optical and electrical performance, such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-AlGaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency.

Keywords: GaN-based light-emitting diodes hole injection layer injection efficiency

Received: 20 September 2011
Revised: 23 November 2011
Accepted manuscript online:

PACS:	85.60.Jb	(Light-emitting devices)
	87.15.A-	(Theory, modeling, and computer simulation)
	78.60.Fi	(Electroluminescence)
	73.61.Ey	(III-V semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 50602018), the Science and Technology Program of Guangdong Province, China (Grant Nos. 2010B090400456, 2009B011100003, and 2010A081002002), and the Science and Technology Program of Guangzhou City, China (Grant No. 2010U1-D00191).

Corresponding Authors: Li Shu-Ti
E-mail: lishuti@scnu.edu.cn

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Wu Le-Juan(仵乐娟), Li Shu-Ti(李述体), Liu Chao(刘超), Wang Hai-Long(王海龙), Lu Tai-Ping(卢太平), Zhang Kang(张康), Xiao Guo-Wei(肖国伟), Zhou Yu-Gang(周玉刚), Zheng Shu-Wen(郑树文), Yin Yi-An(尹以安), and Yang Xiao-Dong(杨孝东) Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers 2012 Chin. Phys. B 21 068506

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Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers

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