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A novel high-voltage light punch-through carrier stored trench bipolar transistor with buried p-layer |
| Zhang Jin-Ping(张金平)†, Li Ze-Hong(李泽宏), Zhang Bo(张波), and Li Zhao-Ji(李肇基) |
| State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
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Abstract A novel high-voltage light punch-through (LPT) carrier stored trench bipolar transistor (CSTBT) with buried p-layer (BP) is proposed in this paper. Since the negative charges in the BP layer modulate the bulk electric field distribution, the electric field peaks both at the junction of the p base/n-type carrier stored (N-CS) layer and the corners of the trench gates are reduced, and new electric field peaks appear at the junction of the BP layer/N- drift region. As a result, the overall electric field in the N- drift region is enhanced and the proposed structure improves the breakdown voltage (BV) significantly compared with the LPT CSTBT. Furthermore, the proposed structure breaks the limitation of the doping concentration of the N-CS layer (NN -CS) to the BV, and hence a higher NN-CS can be used for the proposed LPT BP-CSTBT structure and a lower on-state voltage drop (Vce(sat)) can be obtained with almost constant BV. The results show that with a BP layer doping concentration of NBP=7 × 1015 cm-3, a thickness of LBP=2.5 μm, and a width of WBP=5 μm, the BV of the proposed LPT BP-CSTBT increases from 1859 V to 1862 V, with NN-CS increasing from 5 × 1015 cm-3 to 2.5 × 1016 cm-3. However, with the same N--drift region thickness of 150 μm and NN-CS, the BV of the CSTBT decreases from 1598 V to 247 V. Meanwhile, the Vce(sat) of the proposed LPT BP-CSTBT structure decreases from 1.78 V to 1.45 V with NN-CS increasing from 5 × 1015 cm-3 to 2.5 × 1016 cm-3.
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Received: 15 November 2011
Revised: 02 March 2012
Accepted manuscript online:
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PACS:
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85.30.-z
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(Semiconductor devices)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.Pq
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(Bipolar transistors)
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85.30.Tv
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(Field effect devices)
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| Fund: Project supported by the National Science and Technology Major Project of China (Grant No. 2011ZX02504-003) and the Fundamental Research Funds for the Central Universities, China (Grant No. ZYGX2011J024). |
Corresponding Authors:
Zhang Jin-Ping
E-mail: jinpingzhang@uestc.edu.cn
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Cite this article:
Zhang Jin-Ping(张金平), Li Ze-Hong(李泽宏), Zhang Bo(张波), and Li Zhao-Ji(李肇基) A novel high-voltage light punch-through carrier stored trench bipolar transistor with buried p-layer 2012 Chin. Phys. B 21 068504
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| [1] |
Li Z H, Qian M L and Zhang B 2009 Proc. IEEE 21st International Symposium on Power Semiconductor Devices & IC's June 14-18, 2009, Barcelona, Spain p. 124
|
| [2] |
Antoniou M, Udrea F, Bauer F and Nistor I 2011 IEEE Trans. Electron Dev. 58 769
|
| [3] |
Vobecky J 2006 Proc. 27th International Conference on Microelectronics, May 16-19, 2010, NIŠ, Serbia p. 67
|
| [4] |
Kopta A, Rahimo M, Eicher S and Schlapbach U 2006 Proc. IEEE 18th International Symposium on Power Semiconductor Devices & IC's, June 4-8, 2006, Naples, Italy p. 1
|
| [5] |
Ranstad P and Nee H 2011 IEEE Trans. Power Electronics 26 260
|
| [6] |
Onozawa Y, Otsuki M, Iwamuro N, Miyashita S, Miyasaka T, Seki Y and Matsumoto T 2007 IEEE Trans. Industry Appl. 43 513
|
| [7] |
Zhang F, Shi L, Li C, Wang W, Yu W and Sun Xi 2006 IEEE Trans. Plasma Sci. 34 1026
|
| [8] |
Iwamoto H, Haruguchi H, Tomomatsu Y, Donlon J F and Motto E R 2002 IEEE Trans. Industry Appl. 38 168
|
| [9] |
Luo X R, Yao G L, Chen X, Wang Q, Ge R and Florin U 2011 Chin. Phys. B 20 028501
|
| [10] |
Hu S D, Wu L J, Zhou J L, Gan P, Zhang B and Li Z J 2012 Chin. Phys. B 21 027101
|
| [11] |
Laska T, Munzer M, Pfirsch F, Schaeffer C and Schmidt T 2000 Proc. IEEE 12nd International Symposium on Power Semiconductor Devices & IC's May 22-25, 2000, Toulouse, France p. 355
|
| [12] |
Oyama K, Arai T, Saitou K, Masuda K and Mori M 2004 Proc. IEEE 16th International Symposium on Power Semiconductor Devices & IC's, May 24-27, 2004, Milan, Italy p. 111
|
| [13] |
Mori M, Oyama K, Arai T, Sakano J, Nishimura Y, Masuda K, Saito K, Uchino Y and Homma H 2007 IEEE Trans. Electron Dev. 54 1515
|
| [14] |
Onozawa Y, Ozaki D, Nakano H, Yamazaki T and Fujishima N 2011 Proc. IEEE 23th International Symposium on Power Semiconductor Devices & IC's, May 23-26, 2011, San Diego, USA p. 52
|
| [15] |
Takahashi T, Tomomatsu Y and Sato K 2008 Proc. IEEE 20th International Symposium on Power Semiconductor Devices & IC's, May 18-22, 2008, Florida, USA p. 72.
|
| [16] |
Mori M, Oyama K, Kohno Y, Sakano J, Uruno J, Ishizaka K and Kawase D 2007 IEEE Trans. Electron Dev. 54 2011
|
| [17] |
Nakamura K, Sadamatsu K, Oya D, Shigeoka H and Hatade K 2010 Proc. IEEE 22th International Symposium on Power Semiconductor Devices & IC's, June 6-10, 2010, Hiroshima, Japan p. 387
|
| [18] |
Haraguchi Y, Honda S, Nakata1 K, Narazaki A and Terasaki Y 2011 Proc. IEEE 23th International Symposium on Power Semiconductor Devices & IC's, May 23-26, 2011, San Diego, USA p. 68
|
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