Chin. Phys. B
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Chin. Phys. B  2012, Vol. 21 Issue (6): 068501    DOI: 10.1088/1674-1056/21/6/068501
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
A low on-resistance triple RESURF SOI LDMOS with planar and trench gate integration
Luo Xiao-Ronga b, Yao Guo-Lianga, Zhang Zheng-Yuanb, Jiang Yong-Henga, Zhou Kuna, Wang Peia, Wang Yuan-Ganga, Lei Tian-Feia, Zhang Yun-Xuana, Wei Jiea
a. State Key Laboratory of Electronic Thin Films and Integrated Devices. University of Electronic Science and Technology of China, Chengdu 610054, China;
b. No. 24 Research Institute of China Electronics Technology Group Corporation, Chongqing 400060, China

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