Far-infrared electroluminescence characteristics of an Si-based photodiode under a forward DC bias current

doi:10.1088/1674-1056/21/6/067304

Abstract At room temperature, the bias dependence of a far-infrared electroluminescence image of a photodiode is investigated in the dark condition. The results show that the electroluminescence image can be used to detect defects in the photodiode. Additionally, it is found that the electroluminescence intensity has a power law dependence on the dc bias current. The photodiode ideality factor could be obtained by a fitting a relationship between the electroluminescence intensity and the bias current. The device defect levels will be easily determined according to the infrared image and the extracted ideality factor value. This work is of guiding significance for current solar cell testing and research.

Keywords: photodiode electroluminescence images electroluminescence intensity

Received: 08 November 2011
Revised: 07 December 2011
Accepted manuscript online:

PACS:	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	78.60.Fi	(Electroluminescence)
	42.87.-d	(Optical testing techniques)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 10904059, 41066001, 61072131, 61177096), Aeronautical Science Foundation of China (Grant No. 2010ZB56004), the Scientific Research Foundation of Jiangxi Provincial Department of Education, China (Grant No. GJJ11176), the Open Fund of the Key Laboratory of Nondestructive Testing (Ministry of Education, Nanchang Hangkong University) (Grant No. ZD201029005), the Natural Science Foundation of Jiangxi Province, China (Grant No. 2009GZW0024), and the Graduate Innovation Base of Jiangxi Province, China.

Corresponding Authors: Xiao Wen-Bo
E-mail: xiaowenbo1570@163.com

Cite this article:

Xiao Wen-Bo(肖文波), He Xing-Dao(何兴道), Zhang Zhi-Min(张志敏), Gao Yi-Qing(高益庆), and Liu Jiang-Tao(刘江涛) Far-infrared electroluminescence characteristics of an Si-based photodiode under a forward DC bias current 2012 Chin. Phys. B 21 067304

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Far-infrared electroluminescence characteristics of an Si-based photodiode under a forward DC bias current

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