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Chin. Phys. B, 2012, Vol. 21(6): 067201    DOI: 10.1088/1674-1056/21/6/067201
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Influence of a two-dimensional electron gas on current–voltage characteristics of Al0.3Ga0.7 N/GaN high electron mobility transistors

Ji Dong(冀东)a), Liu Bing(刘冰)a), Lu Yan-Wu(吕燕伍)a)†, Zou Miao(邹杪)b), and Fan Bo-Ling(范博龄)a)
a. School of Science, Beijing Jiaotong University, Beijing 100044, China;
b. School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing 100044, China
Abstract  The J-V characteristics of AltGa1-tN/GaN high electron mobility transistors (HEMTs) are investigated and simulated using the self-consistent solution of the Schrödinger and Poisson equations for a two-dimensional electron gas (2DEG) in a triangular potential well with the Al mole fraction t=0.3 as an example. Using a simple analytical model, the electronic drift velocity in a 2DEG channel is obtained. It is found that the current density through the 2DEG channel is on the order of 1013 A/m2 within a very narrow region (about 5 nm). For a current density of 7 $\times$ 1013 A/m2 passing through the 2DEG channel with a 2DEG density of above 1.2 $\times$ 1017 m-2 under a drain voltage Vds=1.5 V at room temperature, the barrier thickness Lb should be more than 10 nm and the gate bias must be higher than 2 V.
Keywords:  two-dimensional electron gas      high electron mobility transistor      heterointerface      nitride semiconductor  
Received:  03 August 2011      Revised:  28 November 2011      Accepted manuscript online: 
PACS:  72.80.Ey (III-V and II-VI semiconductors)  
  73.40.-c (Electronic transport in interface structures)  
  73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60976070) and the Excellent Science and Technology Innovation Program from Beijing Jiaotong University, China.
Corresponding Authors:  Lü Yan-Wu     E-mail:  ywlu@bjtu.edu.cn

Cite this article: 

Ji Dong(冀东), Liu Bing(刘冰), Lu Yan-Wu(吕燕伍), Zou Miao(邹杪), and Fan Bo-Ling(范博龄) Influence of a two-dimensional electron gas on current–voltage characteristics of Al0.3Ga0.7 N/GaN high electron mobility transistors 2012 Chin. Phys. B 21 067201

[1] Feng M, Shen S C, Caruth D C and Huang J J 2004 Proc. IEEE 92 354
[2] Johnson J W, Piner E L, Vescan A, Therrien R, Rajagopal P, Roberts J C, Brown J D, Singhal S and Linthicum K J 2004 IEEE Electron Dev. Lett. 25 459
[3] Nagy W, Brown J, Borges R and Singhal S 2003 IEEE Trans. Microwave Theory Tech. 51 660
[4] Holzworth M R, Rudawski N G, Pearton S J, Jones K S, Lu L, Kang T S, Ren F and Johnson J W 2011 Appl. Phys. Lett. 98 122103
[5] Cheng Z Q, Zhou X P, Hu S, Zhou W J and Zhang S 2010 Acta Phys. Sin. 59 1252 (in Chinese)
[6] Asif K M, Bhattarai A, Kuznia J N and Olson D T 1993 Appl. Phys. Lett. 63 1214
[7] Wu Y F, Kapolnek D, Ibbetson J P, Parikh P, Keller B P and Mishra U K 2001 IEEE Trans. Electron Dev. 48 2181
[8] Ambacher O, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Schaff W J, Eastman L F, Dimitrov R, Wittmer L, Stutzmann M, Rieger W and Hilsenbeck J 1999 J. Appl. Phys. 85 3222
[9] Cao Y and Jena D 2007 Appl. Phys. Lett. 90 182112
[10] Liu B, Lu Y W, Jin G R, Zhao Y, Wang X L, Zhu Q S and Wang Z G 2010 Appl. Phys. Lett. 97 262111
[11] Gao Z Y, Hao Y, Zhang J C, Li P X and Gu W P 2009 Chin. Phy. B 18 4970
[12] Wang C, Quan S, Ma X H, Hao Y, Zhang J C and Mao W 2010 Acta Phys. Sin. 59 7333 (in Chinese)
[13] Ni J Y, Hao Y, Zhang J C, Duan H T and Zhang J F 2009 Acta Phys. Sin. 58 4925 (in Chinese)
[14] Jena D, Gossard A C and Mishra U K 2000 Appl. Phys. Lett. 76 1707
[15] Zhang J C, Zheng P T, Zhang J, Xu Z H and Hao Y 2009 Chin. Phys. B 18 2998
[16] Moradi M and Valizaden P 2011 J. Appl. Phys. 109 024509
[17] Koudymov A, Shur M, Simin G, Chu K, Chao P, Lee C, Jimenez J and Balistreri A 2008 IEEE Trans. Electron Dev. 55 712
[18] Shey A and Ku W 1989 IEEE Trans. Electron Dev. 36 2299
[19] Barnham K and Vvedensky D 2001 Low-Dimensional Semiconductor Structures (New York: Cambridge University Press) p. 62
[20] Cao Y, Xing H and Jena D 2010 Appl. Phys. Lett. 97 222116
[21] Hedin L and Lundqvist B I 1971 J. Phys. C 4 2064
[22] Starikov E, Shiktorov P, Gruinskis V, Varani L, Vaissiere J C, Palermo C and Reggiani L 2005 J. Appl. Phys. 98 083701
[23] Jovanovic V D, Ikonic Z, Indjin D, Harrison P, Milanovic V and Soref R A 2003 J. Appl. Phys. 93 3194
[24] Xu X, Liu X, Yang S, Liu J, Wei H, Zhu Q and Wang Z 2009 Appl. Phys. Lett. 94 112102
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