Performance improvement of InGaN blue light-emitting diodes with several kinds of electron-blocking layers

doi:10.1088/1674-1056/21/5/058504

Abstract The performance of InGaN blue light-emitting diodes (LEDs) with different kinds of electron-blocking layers is investigated numerically. We compare the simulated emission spectra, electron and hole concentrations, energy band diagrams, electrostatic fields, and internal quantum efficiencies of the LEDs. The LED using AlGaN with gradually increasing Al content from 0% to 20% as the electron-blocking layer (EBL) has a strong spectrum intensity, mitigates efficiency droop, and possesses higher output power compared with the LEDs with the other three types of EBLs. These advantages could be because of the lower electron leakage current and more effective hole injection. The optical performance of the specifically designed LED is also improved in the case of large injection current.

Keywords: electron-blocking layer light-emitting diode internal quantum efficiency

Received: 14 August 2011
Revised: 27 April 2012
Accepted manuscript online:

PACS:	85.60.Jb	(Light-emitting devices)
	85.50.-n	(Dielectric, ferroelectric, and piezoelectric devices)
	87.15.A-	(Theory, modeling, and computer simulation)
	78.60.Fi	(Electroluminescence)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61176043), the Fund for Strategic and Emerging Industries of Guangdong Province, China (Grant No. 2010A081002005), and the Project of Combination of Production and Research of the Education Ministry and Guangdong Province, China (Grant No. 2010B090400192).

Cite this article:

Chen Jun(陈峻), Fan Guang-Han(范广涵), Zhang Yun-Yan(张运炎), Pang Wei(庞玮), Zheng Shu-Wen(郑树文), and Yao Guang-Rui(姚光锐) Performance improvement of InGaN blue light-emitting diodes with several kinds of electron-blocking layers 2012 Chin. Phys. B 21 058504

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Performance improvement of InGaN blue light-emitting diodes with several kinds of electron-blocking layers

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