A k·p analytical model for valence band of biaxial strained Ge on (001) Si1-xGex

doi:10.1088/1674-1056/21/5/057103

Abstract In this paper, the dispersion relationship is derived by using the k·p method with the help of the perturbation theory, and we obtain the analytical expression in connection with the deformation potential. The calculation of the valence band of the biaxial strained Ge/(001)Si_1-xGe_x is then performed. The results show that the first valence band edge moves up as Ge fraction x decreases, while the second valence band edge moves down. The band structures in the strained Ge/ (001)Si_0.4Ge_0.6 exhibit significant changes with x decreasing in the relaxed Ge along the [0, 0, k] and the [k, 0, 0] directions. Furthermore, we employ a pseudo-potential total energy package (CASTEP) approach to calculate the band structure with the Ge fraction ranging from x=0.6 to 1. Our analytical results of the splitting energy accord with the CASTEP-extracted results. The quantitative results obtained in this work can provide some theoretical references to the understanding of the strained Ge materials and the conduction channel design related to stress and orientation in the strained Ge pMOSFET.

Keywords: strained Ge valence band k·p method dispersion relationship

Received: 16 September 2011
Revised: 27 April 2012
Accepted manuscript online:

PACS:	71.20.-b	(Electron density of states and band structure of crystalline solids)
	73.20.At	(Surface states, band structure, electron density of states)

Fund: Project supported by the Fundamental Research Funds for the Central Universities, China (Grant Nos. 72105499 and 72104089) and the Natural Science Basic Research Plan in Shaanxi Province, China (Grant No. 2010JQ8008).

Cite this article:

Wang Guan-Yu(王冠宇), Zhang He-Ming(张鹤鸣), Gao Xiang(高翔), Wang Bin(王斌), and Zhou ChunYu(周春宇) A k·p analytical model for valence band of biaxial strained Ge on (001) Si_1-xGe_x 2012 Chin. Phys. B 21 057103

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A k·p analytical model for valence band of biaxial strained Ge on (001) Si_1-xGe_x

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