A gate enhanced power U-shaped MOSFET integrated with a Schottky rectifier

doi:10.1088/1674-1056/21/5/056104

Abstract An accumulation gate enhanced power U-shaped metal-oxide-semiconductor field-effect-transistor (UMOSFET) integrated with a Schottky rectifier is proposed. In this device, a Schottky rectifier is integrated into each cell of the accumulation gate enhanced power UMOSFET. Specific on-resistances of 7.7 mΩ·mm² and 6.5 mΩ·mm² for the gate bias voltages of 5 V and 10 V are achieved, respectively, and the breakdown voltage is 61 V. The numerical simulation shows a 25% reduction in the reverse recovery time and about three orders of magnitude reduction in the leakage current as compared with the accumulation gate enhanced power UMOSFET.

Keywords: accumulation Schottky source reverse recovery time leakage current

Received: 22 September 2011
Revised: 27 April 2012
Accepted manuscript online:

PACS:	61.82.Fk	(Semiconductors)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	78.40.Fy	(Semiconductors)
	85.30.Fg	(Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices))

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60906048) and the Program for New Century Excellent Talents in University, China (Grant No. NCET-10-0052).

Cite this article:

Wang Ying(王颖), Jiao Wen-Li(焦文利), Hu Hai-Fan (胡海帆), Liu Yun-Tao(刘云涛), and Cao Fei(曹菲) A gate enhanced power U-shaped MOSFET integrated with a Schottky rectifier 2012 Chin. Phys. B 21 056104

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A gate enhanced power U-shaped MOSFET integrated with a Schottky rectifier

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