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Chin. Phys. B, 2012, Vol. 21(4): 048501    DOI: 10.1088/1674-1056/21/4/048501
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Analytical model including the fringing-induced barrier lowering effect for a dual-material surrounding-gate MOSFET with a high-$\kappa$ gate dielectric

Li Cong(李聪), Zhuang Yi-Qi(庄奕琪), Zhang Li(张丽), and Bao Jun-Lin(包军林)
School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract  By solving Poisson's equation in both semiconductor and gate insulator regions in the cylindrical coordinates, an analytical model for a dual-material surrounding-gate (DMSG) metal-oxide semiconductor field-effect transistor (MOSFET) with a high-$\kappa$ gate dielectric has been developed. Using the derived model, the influences of fringing-induced barrier lowering (FIBL) on surface potential, subthreshold current, DIBL, and subthreshold swing are investigated. It is found that for the same equivalent oxide thickness, the gate insulator with high-$\kappa$ dielectric degrades the short-channel performance of the DMSG MOSFET. The accuracy of the analytical model is verified by the good agreement of its results with that obtained from the ISE three-dimensional numerical device simulator.
Keywords:  high-$\kappa$ gate dielectric      fringing-induced barrier lowering      analytical model   
Received:  28 September 2011      Revised:  19 December 2011      Accepted manuscript online: 
PACS:  85.30.De (Semiconductor-device characterization, design, and modeling)  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  02.60.Cb (Numerical simulation; solution of equations)  
Fund: Project supported by the Fundamental Research Funds for the Central Universities (Grant No. K50511250001) and the National Natural Science Foundation of China (Grant No. 61076101).
Corresponding Authors:  Li Cong,cong.li@mail.xidian.edu.cn     E-mail:  cong.li@mail.xidian.edu.cn

Cite this article: 

Li Cong(李聪), Zhuang Yi-Qi(庄奕琪), Zhang Li(张丽), and Bao Jun-Lin(包军林) Analytical model including the fringing-induced barrier lowering effect for a dual-material surrounding-gate MOSFET with a high-$\kappa$ gate dielectric 2012 Chin. Phys. B 21 048501

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