The effects of post-thermal annealing on the optical parameters of indium-doped ZnO thin films

doi:10.1088/1674-1056/21/4/047305

Abstract Indium-doped ZnO thin films are deposited on quartz glass slides by RF magnetron sputtering at ambient temperature. The as-deposited films are annealed at different temperatures from 400 ℃ to 800 ℃ in air for 1 h. Transmittance spectra are used to determine the optical parameters and the thicknesses of the films before and after annealing using a nonlinear programming method, and the effects of the annealing temperatures on the optical parameters and the thickness are investigated. The optical band gap is determined from the absorption coefficient. The calculated results show that the film thickness and optical parameters both increase first and then decrease with increasing annealing temperature from 400 ℃ to 800 ℃. The band gap of the as-deposited ZnO:In thin film is 3.28 eV, and it decreases to 3.17 eV after annealing at 400 ℃. Then the band gap increases from 3.17 eV to 3.23 eV with increasing annealing temperature from 400 ℃ to 800 ℃.

Keywords: ZnO thin films optical constants annealing transmittance spectra

Received: 05 June 2011
Revised: 10 August 2011
Accepted manuscript online:

PACS:	73.61.Ga	(II-VI semiconductors)
	81.15.Cd	(Deposition by sputtering)
	68.55.ag	(Semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 50942021 and 11075314) and the Fundamental Research Fund for the Central Universities (Grant No. CDJXS10102207).

Corresponding Authors: Peng Li-Ping,pengliping2005@yahoo.cn;Fang Liang,fangliangcqu@yahoo.com.cn
E-mail: pengliping2005@yahoo.cn;fangliangcqu@yahoo.com.cn

Cite this article:

Peng Li-Ping(彭丽萍), Fang Liang(方亮), Wu Wei-Dong(吴卫东), Wang Xue-Min(王雪敏), and Li Li(李丽) The effects of post-thermal annealing on the optical parameters of indium-doped ZnO thin films 2012 Chin. Phys. B 21 047305

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The effects of post-thermal annealing on the optical parameters of indium-doped ZnO thin films

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