Chin. Phys. B
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Chin. Phys. B  2012, Vol. 21 Issue (4): 047303    DOI: 10.1088/1674-1056/21/4/047303
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel
Zhang Jiana,He Jina b,Zhou Xing-Yea,Zhang Li-Ninga,Ma Yu-Taob,Chen Qinb,Zhang Xu-Kaib,Yang Zhangb,Wang Rui-Feib,HanYub,Chan Mansunc
1. Tera-Scale Research Centre (TSRC), School of Electronics Engineering and Computer Science (EECS), Peking University, Beijing 100871, China;
2. Peking University Shenzhen System on Chip (SOC) Key Laboratory, PKU-HKUST Shenzhen-Hongkong Institution, W303, West Tower, IER Bldg, Hi-Tech Industrial Park South, Shenzhen 518057, China;
3. Department of Electronics and Computer Engineering (ECE), Hong Kong University of Science and Technology, Kowloon, Clearwater Bay, Hong Kong, China