Homogeneous interface-type resistance switching in Au/La0.67Ca0.33MnO3/SrTiO3/F:SnO2 heterojunction memories

doi:10.1088/1674-1056/21/4/047301

Abstract La_0.67Ca_0.33MnO₃ thin films are fabricated on fluorine-doped tin oxide conducting glass substrates by a pulsed laser deposition technique with SrTiO₃ used as a buffer layer. The current-voltage characteristics of the heterojunctions exhibit an asymmetric and resistance switching behaviour. A homogeneous interface-type conduction mechanism is also reported using impedance spectroscopy. The spatial homogeneity of the charge carrier distribution leads to field-induced potential-barrier change at the Au-La_0.67Ca_0.33MnO₃ interface and a concomitant resistance switching effect. The ratio of the high resistance state to the low resistance state is found to be as high as 1.3?10⁴% by simulating the AC electric field. This colossal resistance switching effect will greatly improve the signal-to-noise ratio in nonvolatile memory applications.

Keywords: La_0.67Ca_0.33MnO₃ thin films resistance switching impedance spectroscopy metal-oxide interface

Received: 08 September 2011
Revised: 19 October 2011
Accepted manuscript online:

PACS:	73.40.-c	(Electronic transport in interface structures)
	73.40.Rw	(Metal-insulator-metal structures)
	73.50.Fq	(High-field and nonlinear effects)
	72.20.-i	(Conductivity phenomena in semiconductors and insulators)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60976016), the Program for Innovative Research Team in Science and Technology in University of Henan Province (IRTSTHN), China (Grant No. 2012IRTSTHN004), and the Research Program of Henan University, China (Grant No. SBGJ090503).

Corresponding Authors: Zhang Wei-Feng,wfzhang@henu.edu.cn
E-mail: wfzhang@henu.edu.cn

Cite this article:

Zhang Ting(张婷), Ding Ling-Hong(丁玲红), and Zhang Wei-Feng(张伟风) Homogeneous interface-type resistance switching in Au/La_0.67Ca_0.33MnO₃/SrTiO₃/F:SnO₂ heterojunction memories 2012 Chin. Phys. B 21 047301

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Homogeneous interface-type resistance switching in Au/La0.67Ca0.33MnO3/SrTiO3/F:SnO2 heterojunction memories

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Homogeneous interface-type resistance switching in Au/La_0.67Ca_0.33MnO₃/SrTiO₃/F:SnO₂ heterojunction memories