The electrical properties of sulfur-implanted cubic boron nitride thin films

doi:10.1088/1674-1056/21/4/047202

Abstract Cubic boron nitride (c-BN) thin films are deposited on p-type Si wafers using radio frequency (RF) sputtering and then doped by implanting S ions. The implantation energy of the ions is 19 keV, and the implantation dose is between 10¹⁵ ions/cm² and 10¹⁶ ions/cm². The doped c-BN thin films are then annealed at a temperature between 400 ℃ and 800 ℃. The results show that the surface resistivity of doped and annealed c-BN thin films is lowered by two to three orders, and the activation energy of c-BN thin films is 0.18 eV.

Keywords: cubic boron nitride ion implantation surface resistivity activation energy

Received: 19 July 2011
Revised: 08 October 2011
Accepted manuscript online:

PACS:

72.80.Ey

(III-V and II-VI semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60876006 and 60376007), the Natural Science Foundation of Beijing, China (Grant No. 4072007), the Scientific Research Program of Beijing Municipal Commission of Education, China (Grant No. KM200910005018), the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry, China, and the Funding Project for Academic Human Resources Development in Institutions of Higher Learning under the Jurisdiction of Beijing Municipality.

Corresponding Authors: Deng Jin-Xiang,jdeng@bjut.edu.cn
E-mail: jdeng@bjut.edu.cn

Cite this article:

Deng Jin-Xiang(邓金祥), Qin Yang(秦扬), Kong Le(孔乐), Yang Xue-Liang(杨学良), Li Ting(李廷), Zhao Wei-Ping(赵卫平), and Yang Ping(杨萍) The electrical properties of sulfur-implanted cubic boron nitride thin films 2012 Chin. Phys. B 21 047202

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The electrical properties of sulfur-implanted cubic boron nitride thin films

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