Chin. Phys. B
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Chin. Phys. B  2011, Vol. 20 Issue (9): 098501    DOI: 10.1088/1674-1056/20/9/098501
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A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects
Xu Xiao-Bo, Xu Kai-Xuan, Zhang He-Ming, Qin Shan-Shan
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

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