Flat-band voltage shift in metal-gate/high-k/Si stacks

doi:10.1088/1674-1056/20/9/097303

Abstract In metal-gate/high-k stacks adopted by the 45 nm technology node, the flat-band voltage (V_fb) shift remains one of the most critical challenges, particularly the flat-band voltage roll-off (V_fb roll-off) phenomenon in p-channel metal-oxide-semiconductor (pMOS) devices with an ultrathin oxide layer. In this paper, recent progress on the investigation of the V_fb shift and the origin of the V_fb roll-off in the metal-gate/high-k pMOS stacks are reviewed. Methods that can alleviate the V_fb shift phenomenon are summarized and the future research trend is described.

Keywords: flat-band voltage shift V_fb roll-off metal gate high-k dielectrics

Received: 28 January 2011
Revised: 19 April 2011
Accepted manuscript online:

PACS:	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	85.30.Tv	(Field effect devices)
	73.30.+y	(Surface double layers, Schottky barriers, and work functions)

Cite this article:

Huang An-Ping(黄安平), Zheng Xiao-Hu(郑晓虎), Xiao Zhi-Song(肖志松), Yang Zhi-Chao(杨智超), Wang Mei(王玫), Paul K. Chu(朱剑豪), and Yang Xiao-Dong(杨晓东) Flat-band voltage shift in metal-gate/high-k/Si stacks 2011 Chin. Phys. B 20 097303

[1]	Han D D, Kang J F, Lin C H and Han R Q 2003 Chin. Phys. 12 325
[2]	Houssa M, Pantisano L, Ragnarsson L, Degraeve R, Schram T, Pourtois G, de Gendt S, Groeseneken G and Heyns M M 2006 Mater. Sci. Eng. R 51 37
[3]	Ragnarsson L A, Guha S, Copel M, Cartier E, Bojarczuk N A and Karasinski J 2001 Appl. Phys. Lett. 78 4169
[4]	Zafar S, Callegari A, Gusev E and Fischetti M V 2003 J. Appl. Phys. 93 9298
[5]	Houssa M, Afanas'ev V V, Stesmans A and Heyns M M 2000 Appl. Phys. Lett. 77 1885
[6]	Lee B H, Oh J, Tseng H H, Jammy R and Huff H 2006 Mater. Today 9 32
[7]	Park D G, Cho H J, Yeo I S, Roh J S and Hwang J M 2000 Appl. Phys. Lett. 77 2207
[8]	Hobbs C C, Fonseca L R C, Knizhnik A, Dhandapani V, Samavedam S B, Taylor W J, Grant J M, Dip L G, Triyoso D H, Hegde R I, Gilmer D C, Garcia R, Roan D, Lovejoy M L, Rai R S, Hebert E A, Hsing-Huang T, Anderson S G H, White B E and Tobin P J 2004 IEEE Trans. Electron Dev. 51 978
[9]	Miyata N, Yasuda T and Abe Y 2010 Appl. Phys. Expr. 3 054101
[10]	Song S C, Park C S, Price J, Burham C, Choi R, Wen H C, Choi, K, Tseng H H, Lee B H and Jammy R 2007 IEEE Inernational Electron Devices Meetting, December 10—12, 2007 Washington D.C., USA, p. 337
[11]	Bersuker G, Park C S, Wen H C, Choi K, Sharia O and Demkov A 2008 IEEE 38th Europe Solid-State Device Research Conference, Septemper 15—19, 2008 Edinburgh, UK, p. 134
[12]	Kakushima K, Okamoto K, Adachi M, Tachi K, Ahmet P, Tsutsui K, Sugii N, Hattori T and Iwai H 2008 Solid-State Electron. 52 1280
[13]	Huang A P, Xiao Z S, Liu X Y, Wang L and Chu P K 2008 Appl. Phys. Lett. 93 122907
[14]	Choi K, Lee T, Barnett J, Harris H R, Kweon S, Young C, Bersuker G, Choi R, Song S C, Lee B H and Jammy R 2007 IEEE International 45th Annual Reliability Physical Symposium Proceeding, April 15—19, 2007 Phoenix, USA, p. 374
[15]	Yeo Y C, King T J and Hu C 2002 J. Appl. Phys. 92 7266
[16]	Miyamura M, Masuzaki K, Watanabe H, Ikarashi N and Tatsumi T 2004 Jpn. J. Appl. Phys. Part 1 43 7843
[17]	Robertson J 2006 Rep. Prog. Phys. 69 327
[18]	Yang Z C, Huang A P, Zheng X H, Xiao Z S, Liu X Y, Zhang X W, Chu P K and Wang W W 2010 IEEE Electron Dev. Lett. 31 1101
[19]	Monch W 1987 Phys. Rev. Lett. 58 1260
[20]	Wen H C, Majhi P, Choi K, Park C S, Alshareef H N, Harris H R, Luan H, Niimi H, Park H B, Bersuker G, Lysaght P S, Kwong D L, Song S C, Lee B H and Jammy R 2008 Microelectron. Eng. 85 2
[21]	Wen H C, Rino C, Brown G A, BosckeBoscke T, Matthews K, Harris H R, Kisik C, Alshareef H N, Hongfa L, Bersuker G, Majhi P, Kwong D L and Lee B H 2006 IEEE Electron Dev. Lett. 27 598
[22]	Li Z, Schram T, Stesmans A, Franquet A, Witters T, Pantisano L, Yamada N, Tsunoda T, Hooker J, de Gendt S and de Meyer K 2008 Appl. Phys. Lett. 93 083511
[23]	Koyama M, Kamimuta Y, Ino T, Nishiyama A, Kaneko A, Inumiya S, Eguchi K and Takayanagi M 2004 IEEE International Electron Device Meeting, December 13—15, 2004 San Francisco, USA, p. 499
[24]	Wittmer M and Freeouf J L 1992 Phys. Rev. Lett. 69 2701
[25]	Sim J H, Wen H C, Lu J P and Kwong D L 2003 IEEE Electron Dev. Lett. 24 631
[26]	Afanas'ev V V, Houssa M, Stesmans A and Heyns M M 2002 J. Appl. Phys. 91 3079
[27]	Fet A, Haublein V, Bauer A J, Ryssel H and Frey L 2010 J. Appl. Phys. 107 124514
[28]	Schaeffer J K, Fonseca L R C, Samavedam S B, Liang Y, Tobin P J and White B E 2004 Appl. Phys. Lett. 85 1826
[29]	Shiraishi K, Yamada K, Torii K, Akasaka Y, Nakajima K, Konno M, Chikyow T, Kitajima H, Arikado T and Nara Y 2006 Thin Solid Films 508 305
[30]	Shiraishi K, Yamada K, Torii K, Akasaka Y, Nakajima K, Konno M, Chikyow T, Kitajima H and Arikado T 2004 Jpn. J. Appl. Phys. Part 2 43 L1413
[31]	Wang W, Akiyama K, Mizubayashi W, Nabatame T, Ota H and Toriumi A 2009 J. Appl. Phys. 105 064108
[32]	Choi C and Lee J C 2010 J. Appl. Phys. 108 064107
[33]	Choi K, Wen H C, Bersuker G, Harris R and Lee B H 2008 Appl. Phys. Lett. 93 133506
[34]	Akiyama K, Wang W, Mizubayashi W, Ikeda M, Ota H, Nabatame T and Toriumi A 2007 IEEE Symposium VLSI Technology, June 12—14, 2007 Kyoto, Japan, p. 72
[35]	Bersuker G, Chang Seo P, Huang-Chun W, Choi K, Price J, Lysaght P, Hsing-Huang T, Sharia O, Demkov A, Ryan J T and Lenahan P 2010 IEEE Trans. Electron Dev. 57 2047
[36]	Bersuker G, Park C S, Barnett J, Lysaght P S, Kirsch P D, Young C D, Choi R, Lee B H, Foran B, Benthem K van, Pennycook S J, Lenahan P M and Ryan J T 2006 J. Appl. Phys. 100 094108
[37]	Harada Y, Eriguchi K, Niwa M, Watanabe T and Ohdomari I 2000 Jpn. J. Appl. Phys. 39 4687
[38]	Kita K and Toriumi A 2009 Appl. Phys. Lett. 94 132902
[39]	Kirsch P D, Sivasubramani P, Huang J, Young C D, Quevedo-Lopez M A, Wen H C, Alshareef H, Choi K, Park C S, Freeman K, Hussain M M, Bersuker G, Harris H R, Majhi P, Choi R, Lysaght P, Lee B H, Tseng H H, Jammy R, Boscke T S, Lichtenwalner D J, Jur J S and Kingon A I 2008 Appl. Phys. Lett. 92 092901
[40]	Iwamoto K, Ogawa A, Kamimuta Y, Watanabe Y, Mizubayashi W, Migita S, Morita Y, Takahashi M, Ito H, Ota H, Nabatame T and Toriumi A 2007 IEEE Symposium VLSI Technology, June 12—14, 2007 Kokyo, Japan, p. 70
[41]	Wang X L, Han K, Wang W W, Chen S J, Ma X L, Chen D P, Zhang J, Du J, Xiong Y H and Huang A P 2010 Appl. Phys. Lett. 96 152907
[42]	Nabatame T, Iwamoto K, Akiyama K, Nunoshige Y, Ota H, Ohishi T and Toriumi A 2007 ECS Trans. 11 543
[43]	Zheng X H, Huang A P, Xiao Z S, Yang Z C, Wang M, Zhang X W, Wang W W and Chu P K 2010 Appl. Phys. Lett. 97 132908
[44]	Kageshima H and Shiraishi K 1998 Surf. Sci. 407 133
[45]	Ferrari S and Fanciulli M 2006 J. Phys. Chem. B 110 14905
[46]	Ferrari S and Scarel G 2004 J. Appl. Phys. 96 144
[47]	Alshareef H N, Luan H F, Choi K, Harris H R, Wen H C, Quevedo-Lopez M A, Majhi P and Lee B H 2006 Appl. Phys. Lett. 88 112114
[48]	Tseng H-H, Kirsch P, Park C S, Bersuker G, Majhi P, Hussain M and Jammy R 2009 Microelectron. Eng. 86 1722
[49]	Yu H Y, Li M F and Kwong D L 2004 Thin Solid Films 462—463 110
[50]	Sharia O, Demkov A A, Bersuker G and Lee B H 2008 Phys. Rev. B 77 085326
[51]	Yang Z C, Huang A P, Yan L, Xiao Z S, Zhang X W, Chu P K and Wang W W 2009 Appl. Phys. Lett. 94 252905
[52]	Akiyama K, Wang W, Mizubayashi W, Ikeda M, Ota H, Nabatame T and Toriumi A 2008 IEEE Symposium on VLSI Technology, June 17—19, 2008 Honolulu, USA, p. 80
[53]	Zheng X H, Huang A P, Yang Z C, Xiao Z S, Wang M and Cheng G A 2011 Acta Phys. Sin. 60 017702 (in Chinese)
[54]	Du G, Liu X Y, Xia Z L,Yang J F and Han R Q 2010 Chin. Phys. B 19 057304
[55]	Hu A B and Xu Q X 2010 Chin. Phys. B 19 057302
[56]	Zhou J L and Niu Q L 2010 Chin. Phys. B 19 077305

[1]	Key technologies for dual high-k and dual metal gate integration Yong-Liang Li(李永亮), Qiu-Xia Xu(徐秋霞), Wen-Wu Wang(王文武). Chin. Phys. B, 2018, 27(9): 097306.
[2]	Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process Yanrong Wang(王艳蓉), Hong Yang(杨红), Hao Xu(徐昊), Weichun Luo(罗维春), Luwei Qi(祁路伟), Shuxiang Zhang(张淑祥), Wenwu Wang(王文武), Jiang Yan(闫江), Huilong Zhu(朱慧珑), Chao Zhao(赵超), Dapeng Chen(陈大鹏), Tianchun Ye(叶甜春). Chin. Phys. B, 2017, 26(8): 087304.
[3]	Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations Hao Xu(徐昊), Hong Yang(杨红), Wei-Chun Luo(罗维春), Ye-Feng Xu(徐烨峰), Yan-Rong Wang(王艳蓉), Bo Tang(唐波), Wen-Wu Wang(王文武), Lu-Wei Qi(祁路伟), Jun-Feng Li(李俊峰), Jiang Yan(闫江), Hui-Long Zhu(朱慧珑), Chao Zhao(赵超), Da-Peng Chen(陈大鹏), Tian-Chun Ye(叶甜春). Chin. Phys. B, 2016, 25(8): 087305.
[4]	Temperature- and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation Hao Xu(徐昊), Hong Yang(杨红), Yan-Rong Wang(王艳蓉), Wen-Wu Wang(王文武), Wei-Chun Luo(罗维春), Lu-Wei Qi(祁路伟), Jun-Feng Li(李俊峰), Chao Zhao(赵超), Da-Peng Chen(陈大鹏), Tian-Chun Ye(叶甜春). Chin. Phys. B, 2016, 25(8): 087306.
[5]	Growth mechanism of atomic-layer-deposited TiAlC metal gatebased on TiCl₄ and TMA precursors Jinjuan Xiang(项金娟), Yuqiang Ding(丁玉强), Liyong Du(杜立永), Junfeng Li(李俊峰),Wenwu Wang(王文武), Chao Zhao(赵超). Chin. Phys. B, 2016, 25(3): 037308.
[6]	Energy distribution extraction of negative charges responsible for positive bias temperature instability Ren Shang-Qing (任尚清), Yang Hong (杨红), Wang Wen-Wu (王文武), Tang Bo (唐波), Tang Zhao-Yun (唐兆云), Wang Xiao-Lei (王晓磊), Xu Hao (徐昊), Luo Wei-Chun (罗维春), Zhao Chao (赵超), Yan Jiang (闫江), Chen Da-Peng (陈大鹏), Ye Tian-Chun (叶甜春). Chin. Phys. B, 2015, 24(7): 077304.
[7]	Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high-k/metal gate last process Wang Yan-Rong (王艳蓉), Yang Hong (杨红), Xu Hao (徐昊), Wang Xiao-Lei (王晓磊), Luo Wei-Chun (罗维春), Qi Lu-Wei (祁路伟), Zhang Shu-Xiang (张淑祥), Wang Wen-Wu (王文武), Yan Jiang (闫江), Zhu Hui-Long (朱慧珑), Zhao Chao (赵超), Chen Da-Peng (陈大鹏), Ye Tian-Chun (叶甜春). Chin. Phys. B, 2015, 24(11): 117306.
[8]	Analysis of flatband voltage shift of metal/high-k/SiO₂/Si stack based on energy band alignment of entire gate stack Han Kai (韩锴), Wang Xiao-Lei (王晓磊), Xu Yong-Gui (徐永贵), Yang Hong (杨红), Wang Wen-Wu (王文武). Chin. Phys. B, 2014, 23(11): 117702.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Flat-band voltage shift in metal-gate/high-k/Si stacks

Cite this article:

Online attention