Detailed balance limit efficiency of silicon intermediate band solar cells

doi:10.1088/1674-1056/20/9/097103

Abstract The detailed balance method is used to study the potential of the intermediate band solar cell (IBSC), which can improve the efficiency of the Si-based solar cell with a bandgap between 1.1 eV to 1.7 eV. It shows that a crystalline silicon solar cell with an intermediate band located at 0.36 eV below the conduction band or above the valence band can reach a limiting efficiency of 54% at the maximum light concentration, improving greatly than 40.7% of the Shockley—Queisser limit for the single junction Si solar cell. The simulation also shows that the limiting efficiency of the silicon-based solar cell increases as the bandgap increases from 1.1 eV to 1.7 eV, and the amorphous Si solar cell with a bandgap of 1.7 eV exhibits a radiative limiting efficiency of 62.47%, having a better potential.

Keywords: intermediate band silicon solar cell concentrated light detailed balance principle

Received: 01 March 2011
Revised: 12 May 2011
Accepted manuscript online:

PACS:	71.28.+d	(Narrow-band systems; intermediate-valence solids)
	71.55.-i	(Impurity and defect levels)
	84.60.Jt	(Photoelectric conversion)

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Cao Quan(曹权), Ma Zhi-Hua(马志华), Xue Chun-Lai(薛春来),Zuo Yu-Hua(左玉华), and Wang Qi-Ming(王启明) Detailed balance limit efficiency of silicon intermediate band solar cells 2011 Chin. Phys. B 20 097103

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Detailed balance limit efficiency of silicon intermediate band solar cells

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