Chin. Phys. B
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Chin. Phys. B  2011, Vol. 20 Issue (9): 094206    DOI: 10.1088/1674-1056/20/9/094206
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A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well vertical-cavity surface-emitting laser
Guan Bao-Lu, Ren Xiu-Juan, Li Chuan, Li Shuo, Shi Guo-Zhu, Guo Xia
Opto-electronic Devices Research Laboratory, Beijing University of Technology, Beijing 100124, China

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