Luminescence properties of InxGa1 - xN (x ～ 0.04) films grown by metal organic vapour phase epitaxy

doi:10.1088/1674-1056/20/7/076101

Abstract In_xGa_{1 - x}N (x ～ 0.04) films are grown by metal organic vapour phase epitaxy. For the samples grown on GaN directly, the relaxation of InGaN happens when its thickness is beyond a critical value. A broad band is observed in the luminescence spectrum, and its intensity increases with the increasing degree of relaxation. Secondary ion mass spectrometry measurement rules out the possibility of the broad band originating from impurities in InGaN. The combination of the energy-dispersive X-ray spectra and the cathodeluminescence measurements shows that the origin of the broad band is attributed to the indium composition inhomogeneity caused by the phase separation effect. The measurement results of the tensile-strained sample further demonstrate the conclusions.

Keywords: InGaN phase separation composition inhomogeneity

Received: 09 October 2010
Revised: 09 March 2011
Accepted manuscript online:

PACS:	61.05.cp	(X-ray diffraction)
	64.75.Qr	(Phase separation and segregation in semiconductors)
	78.30.Fs	(III-V and II-VI semiconductors)
	81.05.Ea	(III-V semiconductors)

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Zhao Wei(赵维), Wang Lai(汪莱), Wang Jia-Xing(王嘉星), and Luo Yi(罗毅) Luminescence properties of In_xGa_{1 - x}N (x ～ 0.04) films grown by metal organic vapour phase epitaxy 2011 Chin. Phys. B 20 076101

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Luminescence properties of InxGa1 - xN (x ～ 0.04) films grown by metal organic vapour phase epitaxy

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Luminescence properties of In_xGa_{1 - x}N (x ～ 0.04) films grown by metal organic vapour phase epitaxy