Bias dependence of a deep submicron NMOSFET response to total dose irradiation

doi:10.1088/1674-1056/20/7/070701

Abstract Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions. The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed. The high electric fields at the corners are partly responsible for the subthreshold hump effect. Charge trapped in the isolation oxide, particularly at the Si/SiO₂ interface along the sidewalls of the trench oxide creates a leakage path, which becomes a dominant contributor to the off-state drain-to-source leakage current in the NMOSFET. Non-uniform charge distribution is introduced into a three-dimensional (3D) simulation. Good agreement between experimental and simulation results is demonstrated. We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions.

Keywords: bias condition oxide trapped charge shallow trench isolation total ionizing dose

Received: 29 October 2010
Revised: 09 December 2010
Accepted manuscript online:

PACS:	07.87.+v	(Spaceborne and space research instruments, apparatus, and components (satellites, space vehicles, etc.))
	85.30.-z	(Semiconductor devices)

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Liu Zhang-Li(刘张李), Hu Zhi-Yuan(胡志远), Zhang Zheng-Xuan(张正选), Shao Hua(邵华), Chen Ming(陈明), Bi Da-Wei(毕大炜), Ning Bing-Xu(宁冰旭), and Zou Shi-Chang(邹世昌) Bias dependence of a deep submicron NMOSFET response to total dose irradiation 2011 Chin. Phys. B 20 070701

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Bias dependence of a deep submicron NMOSFET response to total dose irradiation

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