Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition

doi:10.1088/1674-1056/20/6/068502

Abstract The fabrication and performance of 160-nm gate-length metamorphic AlInAs/GaInAs high electron mobility transistors (mHEMTs) grown on GaAs substrate by metal organic chemical vapour deposition (MOCVD) are reported. By using a novel combined optical and e-beam photolithography technology, submicron mHEMTs devices have been achieved. The devices exhibit good DC and RF performance. The maximum current density was 817 mA/mm and the maximum transconductance was 828 mS/mm. The non-alloyed Ohmic contact resistance R_c was as low as 0.02 Ωmm. The unity current gain cut-off frequency (f_T) and the maximum oscillation frequency (f_max) were 146 GHz and 189 GHz, respectively. This device has the highest f_T yet reported for a 160-nm gate-length HEMTs grown by MOCVD. The output conductance is 28.9 mS/mm, which results in a large voltage gain of 28.6. Also, an input capacitance to gate-drain feedback capacitance ratio, Cgs/Cgd, of 4.3 is obtained in the device.

Keywords: GaAs metamorphic high electron mobility transistor metal-organic chemical vapour deposition

Received: 27 December 2010
Revised: 14 January 2011
Accepted manuscript online:

PACS:	85.30.Tv	(Field effect devices)
	77.55.+f
	81.15.Ef
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

Fund: Project supported by CERG Grant (615506) from the Research Grants Council of Hong Kong Special Administrative Region of China and Intel Corporation, Science and Technology Plan of the Education Bureau of Guangxi Zhuang Autonomous Region of China (Grant No. 200911MS93).

Cite this article:

Li Hai-Ou(李海鸥), Huang Wei(黄伟), Tang Chak Wah(邓泽华), Deng Xiao-Fang(邓小芳), and Lau Kei May(刘纪美) Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition 2011 Chin. Phys. B 20 068502

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Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition

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