Strained and strain-relaxed epitaxial Ge1-xSnx alloys on Si(100) substrates

doi:10.1088/1674-1056/20/6/068103

Abstract Epitaxial Ge_1-xSn_x alloys are grown separately on a Ge-buffer/Si(100) substrate and directly on a Si(100) substrate by molecular beam epitaxy (MBE) at low temperature. In the case of the Ge buffer/Si(100) substrate, a high crystalline quality strained Ge_0.97Sn_0.03 alloy is grown, with a $\chi_{\min}$ value of 6.7% measured by channeling and random Rutherford backscattering spectrometry (RBS), and a surface root-mean-square (RMS) roughness of 1.568 nm obtained by atomic force microscopy (AFM). In the case of the Si(100) substrate, strain-relaxed Ge_0.97Sn_0.03 alloys are epitaxially grown at 150℃-300℃, with the degree of strain relaxation being more than 96%. The X-ray diffraction (XRD) and AFM measurements demonstrate that the alloys each have a good crystalline quality and a relatively flat surface. The predominant defects accommodating the large misfit are Lomer edge dislocations at the interface, which are parallel to the interface plane and should not degrade electrical properties and device performance.

Keywords: GeSn alloys strained strain-relaxed molecular beam epitaxy

Received: 13 November 2010
Revised: 10 December 2010
Accepted manuscript online:

PACS:	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	81.15.Hi	(Molecular, atomic, ion, and chemical beam epitaxy)
	68.55.-a	(Thin film structure and morphology)

Fund: Project supported by the National High Technology Research and Development Program of China (Grant No. 2006AA03Z415), the National Basic Research Program of China (Grant No. 2007CB613404), the National Natural Science Foundation of China (Grant Nos. 60906035 and 61036003), and the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. ISCAS2009T01).

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Wang Wei (汪巍), Su Shao-Jian (苏少坚), Zheng Jun (郑军), Zhang Guang-Ze (张广泽), Zuo Yu-Hua (左玉华), Cheng Bu-Wen (成步文), Wang Qi-Ming (王启明) Strained and strain-relaxed epitaxial Ge_1-xSn_x alloys on Si(100) substrates 2011 Chin. Phys. B 20 068103

[1]	Soref R 2010 Nature Photonics4 495
[2]	Mathews J, Roucka R, Xie J Q, Yu S Q, Menendez J and Kouvetakis J 2009 Appl. Phys. Lett.95 133506
[3]	Costa V R D, Cook C S, Birdwell A G, Littler C L, Canonico M, Zollner S, Kouvetakis J and Menendez J 2006 Phys. Rev. B73 125207
[4]	Tolle J, Roucka R, Costa V R, Menendez J, Chizmeshya A and Kouvetakis J 2006 Mater. Res. Soc. Symp. Proc. p. 891
[5]	Xue H Y, Xue C L, Cheng B W, Yu Y D and Wang Q M 2009 Chin. Phys. B18 2542
[6]	Bauer M, Taraci J, Tolle J, Chizmeshya A V G, Zollner S, Smith D J, Menendez J, Hu C W and Kouvetakis J 2002 Appl. Phys. Lett.81 2992
[7]	Bauer M R, Cook C S, Aella P, Tolle J, Kouvetakis J, Crozier P A, Chizmeshya A V G, Smith D J and Zollner S 2003 Appl. Phys. Lett.83 3489
[8]	Bratland K A, Foo Y L, Spila T, Seo H S, Haasch R T, Desjardins P and Greene J E 2005 J. Appl. Phys.97 044904
[9]	Takeuchi S, Shimura Y, Nakatsuka O, Zaima S, Ogawa, M and Sakai A 2008 Appl. Phys. Lett.92 231916
[10]	de Guevara H P L, Rodriguez A G, Contreras H N and Vidal M A 2003 Appl. Phys. Lett.83 4942
[11]	He G and Atwater H A 1996 Appl. Phys. Lett.68 664
[12]	Takeuchi S, Sakai A, Yamamoto K, Nakatsuka O, Ogawa M and Zaima S 2007 Semicond. Sci. Technol.22 231
[13]	Chizmeshya A V G, Bauer M R and Kouvetakis J 2003 Chem. Mater.15 2511
[14]	Bratland K A, Foo Y L, Soares J A N T, Spila T, Desjardins P and Greene J E 2003 Phys. Rev. B67 125322
[15]	Gölzhäuser A and Ehrlich G 1996 Phys. Rev. Lett.77 1334

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Strained and strain-relaxed epitaxial Ge1-xSnx alloys on Si(100) substrates

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Strained and strain-relaxed epitaxial Ge_1-xSn_x alloys on Si(100) substrates