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Photoluminescence spectroscopy of defects in ZnO nano/microwires |
| Sun Xiang-Bing(孙香冰)a), Feng Lin(冯林)b)†, and Jiao Xian-Wei(焦现炜)a) |
| a 72465 Unit of the PLA, Jinan 250022, China; b School of Physics, Shandong University, Jinan 250100, China |
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Abstract Photoluminescence spectroscopy is used to study defects found in single ZnO nano/microwires at 90 K. The defect, acting as binding site for bound exciton (BX) transition, is represented by BF, the fractional intensity of the BX peak in the whole near-band edge ultraviolet (UV) luminescence. The concentration of defects as origins of the visible emissions is proportional to the intensity fraction DF, i.e., the intensity fraction of visible emissions in the sum total of all UV and visible luminescences. By comparing BF and DF, it is concluded that the two defects are not correlated to each other. The former kind of defect is considered to be related to the blueshift of the near-band edge peak as the radius of the nano/microwires decreases at room temperature.
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Received: 29 August 2010
Revised: 08 October 2010
Accepted manuscript online:
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PACS:
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78.55.-m
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(Photoluminescence, properties and materials)
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78.55.Et
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(II-VI semiconductors)
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42.62.Fi
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(Laser spectroscopy)
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61.46.Km
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(Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires))
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Cite this article:
Sun Xiang-Bing(孙香冰), Feng Lin(冯林), and Jiao Xian-Wei(焦现炜) Photoluminescence spectroscopy of defects in ZnO nano/microwires 2011 Chin. Phys. B 20 067804
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