Different temperature dependence of carrier transport properties between AlxGa1-xN/InyGa1-yN/GaN and AlxGa1-xN/GaN heterostructures

doi:10.1088/1674-1056/20/5/057305

Abstract The temperature dependence of carrier transport properties of Al_xGa_1-xN/In_yGa_1-yN/GaN and Al_xGa_1-xN/GaN heterostructures has been investigated. It is shown that the Hall mobility in Al_0.25Ga_0.75N/In_0.03Ga_0.97N/GaN heterostructures is higher than that in Al_0.25Ga_0.75N/GaN heterostructures at temperatures above 500 K, even the mobility in the former is much lower than that in the latter at 300 K. More importantly, the electron sheet density in Al_0.25Ga_0.75N/In_0.03Ga_0.97N/GaN heterostructures decreases slightly, whereas the electron sheet density in Al_0.25Ga_0.75N/GaN heterostructures gradually increases with increasing temperature above 500 K. It is believed that an electron depletion layer is formed due to the negative polarization charges at the In_yGa_1-yN/GaN heterointerface induced by the compressive strain in the In_yGa_1-yN channel, which effectively suppresses the parallel conductivity originating from the thermal excitation in the underlying GaN layer at high temperatures.

Keywords: temperature dependence Hall mobility parallel conductivity

Received: 22 November 2010
Revised: 07 January 2011
Accepted manuscript online:

PACS:	73.61.Ey	(III-V semiconductors)
	72.20.Fr	(Low-field transport and mobility; piezoresistance)
	73.50.Dn	(Low-field transport and mobility; piezoresistance)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60906041, 60736033, 60890193, and 10774001).

Cite this article:

Song Jie (宋杰), Xu Fu-Jun (许福军), Huang Cheng-Cheng (黄呈橙), Lin Fang (林芳), Wang Xin-Qiang (王新强), Yang Zhi-Jian (杨志坚), Shen Bo (沈波) Different temperature dependence of carrier transport properties between Al_xGa_1-xN/In_yGa_1-yN/GaN and Al_xGa_1-xN/GaN heterostructures 2011 Chin. Phys. B 20 057305

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Different temperature dependence of carrier transport properties between AlxGa1-xN/InyGa1-yN/GaN and AlxGa1-xN/GaN heterostructures

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Different temperature dependence of carrier transport properties between Al_xGa_1-xN/In_yGa_1-yN/GaN and Al_xGa_1-xN/GaN heterostructures