Photovoltage analysis of a heterojunction solar cell

doi:10.1088/1674-1056/20/5/057302

Abstract According to the p–n junction model of Shockley, the relationship between the equilibrium carrier concentrations of n-type and p-type semiconductors on the edges of the depletion region of a p–n junction solar cell is analysed. The calculation results show that the photovoltage can exceed the built-in voltage for a special kind of heterojunction solar cell. When the photovoltage exceeds the built-in voltage under illumination, the dark current and the photocurrent are impeded by the peak of voltage barrier at the interface and the expression of the total I–V characteristic is given.

Keywords: solar cells built-in voltage photovoltage heterojunction

Received: 10 July 2010
Revised: 23 December 2010
Accepted manuscript online:

PACS:	73.40.-c	(Electronic transport in interface structures)
	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	88.40.H-	(Solar cells (photovoltaics))
	88.40.J-	(Types of solar cells)

Cite this article:

Xiong Chao(熊超), Yao Ruo-He(姚若河), and Geng Kui-Wei(耿魁伟) Photovoltage analysis of a heterojunction solar cell 2011 Chin. Phys. B 20 057302

[1]	Kobayashi H, Liu Y L, Yamashita Y, Ivanco J, Imai S and Takahashi M 2006 Solar Energy 80 645
[2]	Zhang W Y, Wu X P, Sun L J, Lin B X and Fu Z X 2008 Acta Phys. Sin. 57 4471 (in Chinese)
[3]	Untila G G, Kost T N and Chebotareva A B 2009 Thin Solid Films 518 1345
[4]	Xia G P, Feng L H, Cai Y P, Li B, Zhang J Q, Zheng J G and Lu T C 2009 Acta Phys. Sin. 58 6465 (in Chinese)
[5]	Contreras M A, Ramanathan K, AbuShama J, Hasoon F, Young D L, Egaas B and Noufi R 2005 Prog. Photovolt: Res. Appl. 13 209
[6]	Wang N N, Yu J S, Zang Y and Jiang Y D 2010 Chin. Phys. B 19 038602
[7]	Sze S M and Kwok K N 2007 Physics of Semiconductor Devices (3rd ed) (New York: Wiley) p. 721
[8]	Anderson R L 1962 Solid-State Electron. 5 431
[9]	Frensley W R and Kroemer H 1977 Phys. Rev. B 16 2642
[10]	Chang L L 1965 Solid-State Electron. 8 721
[11]	Jeffery L G 2003 Handbook of Photovoltaic Science and Engineering (edited by Antonio L and Steven H) (New York: Wiley) p83
[12]	Shockley W 1949 Bell Syst. Tech. J. 28 435
[13]	Sah C T, Noyce R N and Shockley W 1957 Proc. IRE 45 1228
[14]	Moll J L 1958 Proc. IRE 46 1076 endfootnotesize

[1]	Design and research of normally-off β-Ga₂O₃/4H-SiC heterojunction field effect transistor Meixia Cheng(程梅霞), Suzhen Luan(栾苏珍), Hailin Wang(王海林), and Renxu Jia(贾仁需). Chin. Phys. B, 2023, 32(3): 037302.
[2]	Abnormal magnetoresistance effect in the Nb/Si superconductor-semiconductor heterojunction Zhi-Wei Hu(胡志伟) and Xiang-Gang Qiu(邱祥冈). Chin. Phys. B, 2023, 32(3): 037401.
[3]	Micro-mechanism study of the effect of Cd-free buffer layers ZnXO (X=Mg/Sn) on the performance of flexible Cu₂ZnSn(S, Se)⁴ solar cell Caixia Zhang(张彩霞), Yaling Li(李雅玲), Beibei Lin(林蓓蓓), Jianlong Tang(唐建龙), Quanzhen Sun(孙全震), Weihao Xie(谢暐昊), Hui Deng(邓辉), Qiao Zheng(郑巧), and Shuying Cheng(程树英). Chin. Phys. B, 2023, 32(2): 028801.
[4]	Charge-mediated voltage modulation of magnetism in Hf_0.5Zr_0.5O₂/Co multiferroic heterojunction Jia Chen(陈佳), Peiyue Yu(于沛玥), Lei Zhao(赵磊), Yanru Li(李彦如), Meiyin Yang(杨美音), Jing Xu(许静), Jianfeng Gao(高建峰), Weibing Liu(刘卫兵), Junfeng Li(李俊峰), Wenwu Wang(王文武), Jin Kang(康劲), Weihai Bu(卜伟海), Kai Zheng(郑凯), Bingjun Yang(杨秉君), Lei Yue(岳磊), Chao Zuo(左超), Yan Cui(崔岩), and Jun Luo(罗军). Chin. Phys. B, 2023, 32(2): 027504.
[5]	Achieving highly-efficient H₂S gas sensor by flower-like SnO₂-SnO/porous GaN heterojunction Zeng Liu(刘增), Ling Du(都灵), Shao-Hui Zhang(张少辉), Ang Bian(边昂), Jun-Peng Fang(方君鹏), Chen-Yang Xing(邢晨阳), Shan Li(李山), Jin-Cheng Tang(汤谨诚), Yu-Feng Guo(郭宇锋), and Wei-Hua Tang(唐为华). Chin. Phys. B, 2023, 32(2): 020701.
[6]	High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO₂ heterojunction charge trapping stack Wen Xiong(熊文), Jing-Yong Huo(霍景永), Xiao-Han Wu(吴小晗), Wen-Jun Liu(刘文军),David Wei Zhang(张卫), and Shi-Jin Ding(丁士进). Chin. Phys. B, 2023, 32(1): 018503.
[7]	Sub-stochiometric MoO_x by radio-frequency magnetron sputtering as hole-selective passivating contacts for silicon heterojunction solar cells Xiufang Yang(杨秀芳), Shengsheng Zhao(赵生盛), Qian Huang(黄茜), Cao Yu(郁超), Jiakai Zhou(周佳凯), Xiaoning Liu(柳晓宁), Xianglin Su(苏祥林),Ying Zhao(赵颖), and Guofu Hou(侯国付). Chin. Phys. B, 2022, 31(9): 098401.
[8]	Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors Jianan Wei(魏佳男), Yang Li(李洋), Wenlong Liao(廖文龙), Fang Liu(刘方), Yonghong Li(李永宏), Jiancheng Liu(刘建成), Chaohui He(贺朝会), and Gang Guo(郭刚). Chin. Phys. B, 2022, 31(8): 086106.
[9]	Modulation of Schottky barrier in XSi₂N₄/graphene (X=Mo and W) heterojunctions by biaxial strain Qian Liang(梁前), Xiang-Yan Luo(罗祥燕), Yi-Xin Wang(王熠欣), Yong-Chao Liang(梁永超), and Quan Xie(谢泉). Chin. Phys. B, 2022, 31(8): 087101.
[10]	Improving efficiency of inverted perovskite solar cells via ethanolamine-doped PEDOT:PSS as hole transport layer Zi-Jun Wang(王子君), Jia-Wen Li(李嘉文), Da-Yong Zhang(张大勇), Gen-Jie Yang(杨根杰), and Jun-Sheng Yu(于军胜). Chin. Phys. B, 2022, 31(8): 087802.
[11]	Optical simulation of CsPbI₃/TOPCon tandem solar cells with advanced light management Min Yue(岳敏), Yan Wang(王燕), Hui-Li Liang(梁会力), and Zeng-Xia Mei (梅增霞). Chin. Phys. B, 2022, 31(8): 088801.
[12]	An electromagnetic simulation assisted small signal modeling method for InP double-heterojunction bipolar transistors Yanzhe Wang(王彦喆), Wuchang Ding(丁武昌), Yongbo Su(苏永波), Feng Yang(杨枫),Jianjun Ding(丁建君), Fugui Zhou(周福贵), and Zhi Jin(金智). Chin. Phys. B, 2022, 31(6): 068502.
[13]	Applications and functions of rare-earth ions in perovskite solar cells Limin Cang(苍利民), Zongyao Qian(钱宗耀), Jinpei Wang(王金培), Libao Chen(陈利豹), Zhigang Wan(万志刚), Ke Yang(杨柯), Hui Zhang(张辉), and Yonghua Chen(陈永华). Chin. Phys. B, 2022, 31(3): 038402.
[14]	Graphene-based heterojunction for enhanced photodetectors Haiting Yao(姚海婷), Xin Guo(郭鑫), Aida Bao(鲍爱达), Haiyang Mao(毛海央),Youchun Ma(马游春), and Xuechao Li(李学超). Chin. Phys. B, 2022, 31(3): 038501.
[15]	Reveal the large open-circuit voltage deficit of all-inorganicCsPbIBr₂ perovskite solar cells Ying Hu(胡颖), Jiaping Wang(王家平), Peng Zhao(赵鹏), Zhenhua Lin(林珍华), Siyu Zhang(张思玉), Jie Su(苏杰), Miao Zhang(张苗), Jincheng Zhang(张进成), Jingjing Chang(常晶晶), and Yue Hao(郝跃). Chin. Phys. B, 2022, 31(3): 038804.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Photovoltage analysis of a heterojunction solar cell

Cite this article:

Online attention