Unidirectional expansion of lattice parameters in GaN induced by ion implantation

doi:10.1088/1674-1056/20/5/056101

Abstract This paper reports that the 150-keV Mn ions are implanted into GaN thin film grown on Al₂O₃ by metal–organic chemical vapour deposition. The X-ray diffraction reciprocal spacing mapping is applied to study the lattice parameter variation upon implantation and post-annealing. After implantation, a significant expansion is observed in the perpendicular direction. The lattice strain in perpendicular direction strongly depends on ion fluence and implantation geometry and can be partially relaxed by post-annealing. While in the parallel direction, the lattice parameter approximately keeps the same as the unimplanted GaN, which is independent of ion fluence, implantation geometry and post-annealing temperature.

Keywords: GaN ion implantation unidirectional strain X-ray reciprocal space mapping

Received: 24 October 2010
Revised: 16 December 2010
Accepted manuscript online:

PACS:	61.05.cp	(X-ray diffraction)
	61.80.Jh	(Ion radiation effects)
	61.72.uj	(III-V and II-VI semiconductors)
	82.80.Yc	(Rutherford backscattering (RBS), and other methods ofchemical analysis)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11005005), the National Basic Research Program of China (Grant No. 2010CB832904), and the Bilateral Cooperation between China and Flanders (Grant No. BIL 02-02).

Cite this article:

Fa Tao (法涛), Li Lin (李琳), Yao Shu-De (姚淑德), Wu Ming-Fang (吴名枋), Zhou Sheng-Qiang (周生强) Unidirectional expansion of lattice parameters in GaN induced by ion implantation 2011 Chin. Phys. B 20 056101

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Unidirectional expansion of lattice parameters in GaN induced by ion implantation

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