Chin. Phys. B
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Chin. Phys. B  2011, Vol. 20 Issue (4): 048502    DOI: 10.1088/1674-1056/20/4/048502
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Comparison of nitride-based dual-wavelength light- emitting diodes with an InAlN electron-blocking layer and with p-type doped barriers
Zhang Yun-Yan, Fan Guang-Han
Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China

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