Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts

doi:10.1088/1674-1056/20/4/047105

Abstract Ni Schottky contacts on AlGaN/GaN heterostructures have been fabricated. The samples are then thermally treated in a furnace with N₂ ambient at 600 $^\circ$C for different times (0.5, 4.5, 10.5, 18, 33, 48 and 72 h). Current-voltage (I–V) and capacitance–voltage (C–V) relationships are measured, and Schrödinger's and Poisson's equations are self-consistently solved to obtain the characteristic parameters related to AlGaN/GaN heterostructure Schottky contacts: the two-dimensional electron gas (2DEG) sheet density, the polarization sheet charge density, the 2DEG distribution in the triangle quantum well and the Schottky barrier height for each thermal stressing time. Most of the above parameters reduce with the increase of stressing time, only the parameter of the average distance of the 2DEG from the AlGaN/GaN interface increases with the increase of thermal stressing time. The changes of the characteristic parameters can be divided into two stages. In the first stage the strain in the AlGaN barrier layer is present. In this stage the characteristic parameters change rapidly compared with those in the second stage in which the AlGaN barrier layer is relaxed and no strain is present.

Keywords: AlGaN/GaN heterostructures thermal stressing polarization self-consistently solving Schrödinger's and Poisson's equations

Received: 11 September 2010
Revised: 17 November 2010
Accepted manuscript online:

PACS:	71.55.Eq	(III-V semiconductors)
	73.20.At	(Surface states, band structure, electron density of states)
	77.22.Gm	(Dielectric loss and relaxation)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 10774090) and the National Basic Research Program of China (Grant No. 2007CB936602).

Cite this article:

Lü Yuan-Jie(吕元杰), Lin Zhao-Jun(林兆军), Zhang Yu(张宇), Meng Ling-Guo(孟令国), Cao Zhi-Fang(曹芝芳), Luan Chong-Biao(栾崇彪), Chen Hong(陈弘), and Wang Zhan-Guo(王占国) Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts 2011 Chin. Phys. B 20 047105

[1]	Yu E T, Sullivan G J, Asbeck P M, Wang C D, Qiao D and Lau S S 1997 Appl. Phys. Lett. 71 2794
[2]	Ambacher O, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Schaff W J, Eastman L F, Dimitrov R, Wittmer L, Stutzmann M, Rieger W and Hilsenbeck J 1999 J. Appl. Phys. 85 3222
[3]	Miller E J, Dang X Z and Yu E T 2000 J. Appl. Phys. 88 5951
[4]	Chen G L, Chang F C, Shen K C, Ou J, Chen W H, Lee M C, Chen W K, Jou M J and Huang C N 2002 Appl. Phys. Lett. 80 595
[5]	Jeon C M, Jang H W and Lee J L 2003 Appl. Phys. Lett. 82 391
[6]	Lin Z J, Kim H, Lee J and Lu W 2004 Appl. Phys. Lett. 84 1585
[7]	Kim H, Schuette M, Jung H, Song J H, Lee J, Lu W and Mabon J C 2006 Appl. Phys. Lett. 89 053516
[8]	Zhao J Z, Lin Z J, Corrigan T D, Wang Z, You Z D and Wang Z G 2007 Appl. Phys. Lett. 91 173507
[9]	Brunner D, Angerer H, Bustarret E, Freudenberg F, Höpler R, Dimitrov R, Ambacher O and Stutzmann M 1997 J. Appl. Phys. 82 5090
[10]	Martin G, Botchkarev A, Rockett A and Morkocc H 1996 Appl. Phys. Lett. 68 2541
[11]	Lin Z J, Zhao J Z, Corrigan T D, Wang Z, You Z D, Wang Z G and Lu W 2008 J. Appl. Phys. 103 044503
[12]	Lü Y J, Lin Z J, Corrigan T D, Zhao J Z, Cao Z F, Wang Z G and Chen H private communication
[13]	Ye P D, Yang B, Ng K K, Bude J, Wilk G D, Halder S and Hwang J C M 2005 Appl. Phys. Lett. 86 063501
[14]	Lin Z J, Lu W, Lee J and Liu D M 2003 Appl. Phys. Lett. 82 4364
[15]	Miller E J, Yu E T, Poblenz C, Elsass C and Speck J S 2002 Appl. Phys. Lett. 80 3551
[16]	Fiorentini V, Bernardi F and Ambacher O 2002 Appl. Phys. Lett. 80 1204 endfootnotesize

[1]	Polarization Raman spectra of graphene nanoribbons Wangwei Xu(许望伟), Shijie Sun(孙诗杰), Muzi Yang(杨慕紫), Zhenliang Hao(郝振亮), Lei Gao(高蕾), Jianchen Lu(卢建臣), Jiasen Zhu(朱嘉森), Jian Chen(陈建), and Jinming Cai(蔡金明). Chin. Phys. B, 2023, 32(4): 046803.
[2]	Spin- and valley-polarized Goos-Hänchen-like shift in ferromagnetic mass graphene junction with circularly polarized light Mei-Rong Liu(刘美荣), Zheng-Fang Liu(刘正方), Ruo-Long Zhang(张若龙), Xian-Bo Xiao(肖贤波), and Qing-Ping Wu(伍清萍). Chin. Phys. B, 2023, 32(3): 037301.
[3]	A kind of multiwavelength erbium-doped fiber laser based on Lyot filter Zhehai Zhou(周哲海), Jingyi Wu(吴婧仪), Kunlong Min(闵昆龙), Shuang Zhao(赵爽), and Huiyu Li(李慧宇). Chin. Phys. B, 2023, 32(3): 034205.
[4]	Atomic optical spatial mode extractor for vector beams based on polarization-dependent absorption Hong Chang(常虹), Xin Yang(杨欣), Jinwen Wang(王金文), Yan Ma(马燕), Xinqi Yang(杨鑫琪), Mingtao Cao(曹明涛), Xiaofei Zhang(张晓斐), Hong Gao(高宏), Ruifang Dong(董瑞芳), and Shougang Zhang(张首刚). Chin. Phys. B, 2023, 32(3): 034207.
[5]	Ferroelectricity induced by the absorption of water molecules on double helix SnIP Dan Liu(刘聃), Ran Wei(魏冉), Lin Han(韩琳), Chen Zhu(朱琛), and Shuai Dong(董帅). Chin. Phys. B, 2023, 32(3): 037701.
[6]	Bidirectional visible light absorber based on nanodisk arrays Qi Wang(王琦), Fei-Fan Zhu(朱非凡), Rui Li(李瑞), Shi-Jie Zhang(张世杰), and Da-Wei Zhang(张大伟). Chin. Phys. B, 2023, 32(3): 030205.
[7]	Correction of intense laser-plasma interactions by QED vacuum polarization in collision of laser beams Wen-Bo Chen(陈文博) and Zhi-Gang Bu(步志刚). Chin. Phys. B, 2023, 32(2): 025204.
[8]	First-principles prediction of quantum anomalous Hall effect in two-dimensional Co₂Te lattice Yuan-Shuo Liu(刘元硕), Hao Sun(孙浩), Chun-Sheng Hu(胡春生), Yun-Jing Wu(仵允京), and Chang-Wen Zhang(张昌文). Chin. Phys. B, 2023, 32(2): 027101.
[9]	A band-pass frequency selective surface with polarization rotation Bao-Qin Lin(林宝勤), Wen-Zhun Huang(黄文准), Jian-Xin Guo(郭建新), Zhe Liu(刘哲), Yan-Wen Wang(王衍文), and Hong-Jun Ye(叶红军). Chin. Phys. B, 2023, 32(2): 024204.
[10]	A simulation study of polarization characteristics of ultrathin CsPbBr₃ nanowires with different cross-section shapes and sizes Kang Yang(杨康), Huiqing Hu(胡回清), Jiaojiao Wang(王娇娇), Lingling Deng(邓玲玲), Yunqing Lu(陆云清), and Jin Wang(王瑾). Chin. Phys. B, 2023, 32(2): 024214.
[11]	High efficiency of broadband transmissive metasurface terahertz polarization converter Qiangguo Zhou(周强国), Yang Li(李洋), Yongzhen Li(李永振), Niangjuan Yao(姚娘娟), and Zhiming Huang(黄志明). Chin. Phys. B, 2023, 32(2): 024201.
[12]	Multi-band polarization switch based on magnetic fluid filled dual-core photonic crystal fiber Lianzhen Zhang(张连震), Xuedian Zhang(张学典), Xiantong Yu(俞宪同), Xuejing Liu(刘学静), Jun Zhou(周军), Min Chang(常敏), Na Yang(杨娜), and Jia Du(杜嘉). Chin. Phys. B, 2023, 32(2): 024205.
[13]	Evolution of polarization singularities accompanied by avoided crossing in plasmonic system Yi-Xiao Peng(彭一啸), Qian-Ju Song(宋前举), Peng Hu(胡鹏), Da-Jian Cui(崔大健), Hong Xiang(向红), and De-Zhuan Han(韩德专). Chin. Phys. B, 2023, 32(1): 014201.
[14]	A polarization mismatched p-GaN/p-Al_0.25Ga_0.75N/p-GaN structure to improve the hole injection for GaN based micro-LED with secondary etched mesa Yidan Zhang(张一丹), Chunshuang Chu(楚春双), Sheng Hang(杭升), Yonghui Zhang(张勇辉),Quan Zheng(郑权), Qing Li(李青), Wengang Bi(毕文刚), and Zihui Zhang(张紫辉). Chin. Phys. B, 2023, 32(1): 018509.
[15]	Transmissive 2-bit anisotropic coding metasurface Pengtao Lai(来鹏涛), Zenglin Li(李增霖), Wei Wang(王炜), Jia Qu(曲嘉), Liangwei Wu(吴良威),Tingting Lv(吕婷婷), Bo Lv(吕博), Zheng Zhu(朱正), Yuxiang Li(李玉祥),Chunying Guan(关春颖), Huifeng Ma(马慧锋), and Jinhui Shi(史金辉). Chin. Phys. B, 2022, 31(9): 098102.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts

Cite this article:

Online attention