A hybrid model for the charging process of the amorphous SiO2 film in radio frequency microelectromechanical system capacitive switches

doi:10.1088/1674-1056/20/3/037701

Abstract Charging is one of the most important reliability issues in radio frequency microelectro- mechanical systems (RF MEMS) capacitive switches since it makes the actuation voltage unstable. This paper proposes a hybrid model to describe the transient dielectric charging and discharging process in the defect-rich amorphous SiO₂ RF MEMS capacitive switches and verifies experimentally. The hybrid model contains two parts according to two different charging mechanisms of the amorphous SiO₂, which are the polarisation and charge injection. The models for polarisation and for charge injection are established, respectively. Analysis and experimental results show that polarisation is always effective, while the charge injection has a threshold electric field to the amorphous SiO₂ film. Under different control voltage conditions, the hybrid model can accurately describe the experimental data.

Keywords: modeling polarisation charge injection amorphous SiO₂

Received: 16 September 2010
Revised: 27 October 2010
Accepted manuscript online:

PACS:	77.55.-g	(Dielectric thin films)
	77.22.-d	(Dielectric properties of solids and liquids)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60676043).

Cite this article:

Wang Li-Feng(王立峰), Huang Qing-An(黄庆安),Tang Jie-Ying(唐洁影),and Liao Xiao-Ping(廖小平) A hybrid model for the charging process of the amorphous SiO₂ film in radio frequency microelectromechanical system capacitive switches 2011 Chin. Phys. B 20 037701

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A hybrid model for the charging process of the amorphous SiO2 film in radio frequency microelectromechanical system capacitive switches

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A hybrid model for the charging process of the amorphous SiO₂ film in radio frequency microelectromechanical system capacitive switches