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Chin. Phys. B, 2011, Vol. 20(3): 037307    DOI: 10.1088/1674-1056/20/3/037307
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Optoelectronic characterisation of an individual ZnO nanowire in contact with a micro-grid template

Jiang Wei(姜威)a), Gao Hong(高红) a)†, Xu Ling-Ling(徐玲玲)a)‡, Ma Jia-Ning(马佳宁)a), Zhang E(张锷)a), Wei Ping(魏平)a), and Lin Jia-Qi(林家齐) b)
a Heilongjiang Key Laboratory for Low-Dimensional System and Mesoscopic Physics, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China; b Harbin University of Science and Technology, Harbin 150080, China
Abstract  Optoelectronic characterisation of an individual ZnO nanowire in contact with a micro-grid template has been studied. The low-cost micro-grid template made by photolithography is used to fabricate the ohmic contact metal electrodes. The current increases linearly with the bias, indicating good ohmic contacts between the nanowire and the electrodes. The resistivity of the ZnO nanowire is calculated to be 3.8 Ω·cm. We investigate the photoresponses of an individual ZnO nanowire under different light illumination using light emitting diodes (λ=505 nm, 460 nm, 375 nm) as excitation sources in atmosphere. When individual ZnO nanowire is exposured to different light irradiation, we find that it is extremely sensitive to UV illumination; the conductance is much larger upon UV illumination than that in the dark at room temperature. This phenomenon may be related to the surface oxygen molecule adsorbtion, which indicates their potential application to the optoelectronic switching device.
Keywords:  ZnO nanowire      optoelectronic      micro-grid template  
Received:  27 September 2010      Revised:  19 November 2010      Accepted manuscript online: 
PACS:  73.63.-b (Electronic transport in nanoscale materials and structures)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nso. 60776010, 60940021 and 11074060); the Natural Science Foundation of Heilongjiang Province, China (Grant No. A2008-07); and the Doctoral Start-up Fund of Harbin Normal University, China.

Cite this article: 

Jiang Wei(姜威), Gao Hong(高红), Xu Ling-Ling(徐玲玲), Ma Jia-Ning(马佳宁), Zhang E(张锷), Wei Ping(魏平), and Lin Jia-Qi(林家齐) Optoelectronic characterisation of an individual ZnO nanowire in contact with a micro-grid template 2011 Chin. Phys. B 20 037307

[1] Ved P V, Hoonha J, Sookhyun H, Minhyon J and Wonbong C 2008 Nanotechnology 7 6
[2] Sunghoon S, Woong K H, Soon S K and Takhee L 2008 Appl. Phys. Lett. 92 263109
[3] Fu X J, Zhang H Y, Guo C X, Xu J B and Li M 2009 Journal of Semiconductors 30 8
[4] Li Y Y, Cheng C W, Dong X, Gao J S and Zhang H Q 2009 Journal of Semiconductors 30 6
[5] Zhou J, Gu Y D, Hu Y F, Mai W J, Ping H Y, Bao G, Ashok K S, Dennis L P and Wang Z L 2009 Appl. Phys. Lett. 94 191103
[6] Shoou J C, Ting J H, Cheng L H, Lin Y R, I C C and Bohr R H 2008 Nanotechnology 19 095505
[7] Cheng C W, Xu G Y, Zhang H Q and Y L 2007 J. Nanosci. Nanotechnol. 7 12
[8] Wan Q, Li Q H, C Y J and W T H 2004 Appl. Phys. Lett. 84 18
[9] Liu Y, Zhang Z Y, Xu H L, Zhang L H, Wang Z X, Li W L, Li D, Hu Y F, Gao M, Li Q and Peng L M 2009 J. Phys. Chem. C 113 16796
[10] Guo Z, Zhao D X, Liu Y C, Shen D Z, Zhang J Y and Li B H 2008 Appl. Phys. Lett. 93 163501
[11] Hannes K, Yan H Q, Benjamin M, Matthew L and Yang P D 2002 Adv. Mater. 14 2
[12] Chang S L, Myung C P, Kuang Q, Deng Y L, Ashok K S, Dennis L P and Zhang L W 2007 J. Am. Chem. Soc. 129 12096
[13] Woong K and Kyo S C 2009 Phys. Status Solidi A 206 179
[14] Liao Z M, Liu K J, Zhang J M, Xu J and Yu D P 2007 Phys. Lett. A 367 207
[15] Yang Y, Zhang Y, Qi J J, Liao Q L, Tang L D and Wang Y S 2009 J. Appl. Phys. 105 084319
[16] Ping H Y, Li Z and Wang Z L 2009 Adv. Mater. 21 1
[17] Yang Y, Qi J J, Zhang Y, Liao Q L, Tang L D and Qin Z 2008 Appl. Phys. Lett . 92 183117
[18] He X B, Zhong Y T, Cai J M, Zhang C D, Guo H M, Shi D X, Shen C M and Gao H J 2008 Chin. Phys. B 17 9
[19] He J H, Chang P H, Chen C Y and K T T 2009 Nanotechnology 20 135701
[20] Li M, Zhang H Y, Guo C X, Xu J B, Fu X J and Chen P F 2009 Chin. Phys. B 18 11 endfootnotesize
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