Electronic properties and deep level transient spectroscopy of CdS/CdTe thin film solar cells

doi:10.1088/1674-1056/20/3/037103

Abstract It is well known that preparing temperatures and defects are highly related to deep-level impurities. In our studies, the CdTe polycrystalline films have been prepared at various temperatures by close spaced sublimation (CSS). The different preparing temperature effects on CdS/CdTe solar cells and deep-level impurities have been investigated by I–V and C–V measurements and deep level transient spectroscopy (DLTS). By comparison, less dark saturated current density, higher carrier concentration, and better photovoltaic performance are demonstrated in a 580℃ sample. Also there is less deep-level impurity recombination, because the lower hole trap concentration is present in this sample. In addition, three deep levels, E_v+0.341 eV(H4), E_v+0.226 eV(H5) and E_C–0.147 eV(E3), are found in the 580℃ sample, and the possible source of deep levels is analysed and discussed.

Keywords: CdTe electrical properties deep level transient spectroscopy

Received: 30 August 2010
Revised: 20 October 2010
Accepted manuscript online:

PACS:	71.55.-i	(Impurity and defect levels)
	72.80.Ey	(III-V and II-VI semiconductors)
	73.61.-r	(Electrical properties of specific thin films)

Cite this article:

Li Bing(黎兵), Feng Liang-Huan(冯良桓), Wang Zhao(王钊), Zheng Xu(郑旭), Zheng Jia-Gui(郑家贵), Cai Ya-Ping(蔡亚平), Zhang Jing-Quan(张静全), Li Wei(李卫), Wu Li-Li(武莉莉), Lei Zhi(雷智), and Zeng Guang-Gen(曾广根) Electronic properties and deep level transient spectroscopy of CdS/CdTe thin film solar cells 2011 Chin. Phys. B 20 037103

[1]	Chopra K L, Paulson P D and Dutta V 2004 Res. Appl. 12 69
[2]	Morales A and Arturo 2006 Solar Energy 80 675
[3]	Bonnet D and Rabenhorst H 1972 Proc. the 9th Photovoltaic Specialist Conference p129
[4]	Britt J and Ferekides C 1993 Appl. Phys. Lett. 62 2851
[5]	Aramoto T, Kumazama S, Higuchi H, Arita T, Shibutani S, Nishio T, Nakajima J and Murozono M 1997 Jpn. J. Appl. Phys 36 6304
[6]	Wu X, Keane J C, Dhere R G, DeHart C, Albin D S, Duda A, Gessert T A, Asher S, Levi D H and Scheldon P 2001 Proceedings 17th European Photovoltaic Solar Energy Conference p995
[7]	Murali K R and Jayasutha B 2007 Materials Science in Semiconductor Processing 10 36
[8]	Morgan D, Tang J, Kaydanov V, Ohno T R and Trefny J U 1999 AIP Conf. Proc. 462 200
[9]	Bube R H 1998 Photovoltaic Materials(London: Imperial College Press)
[10]	Jaros M 1982 Deep Levels in Semiconductors (Bristol: Adam Hilger Ltd)
[11]	Lang D V 1974 J. Appl. Phys. 45 3023
[12]	Wang Z, Li B, Zheng X, Xie J, Huang Z, Liu C, Feng L H and Zheng J G 2010 Chin. Phys. B 19 027303
[13]	Moualkia H, Hariech S, Aida M S, Attaf N and Laifa E L 2009 Journal of Physics D-Applied Physics 42 135404
[14]	Komin V, Tetali B and Viswanathan V 2003 Thin Solid Films 431 143
[15]	Castaldini A, Cavallini A and Fraboni B 1998 J. Appl. Phys. 83 2121
[16]	Lourenco M A, Yip Kum Yew and Homewood K P 1997 J. Appl. Phys. 82 1423 endfootnotesize

[1]	Effects of preparation parameters on growth and properties of β-Ga₂O₃ film Zi-Hao Chen(陈子豪), Yong-Sheng Wang(王永胜), Ning Zhang(张宁), Bin Zhou(周兵), Jie Gao(高洁), Yan-Xia Wu(吴艳霞), Yong Ma(马永), Hong-Jun Hei(黑鸿君), Yan-Yan Shen(申艳艳), Zhi-Yong He(贺志勇), and Sheng-Wang Yu(于盛旺). Chin. Phys. B, 2023, 32(1): 017301.
[2]	Optical and electrical properties of BaSnO₃ and In₂O₃ mixed transparent conductive films deposited by filtered cathodic vacuum arc technique at room temperature Jian-Ke Yao(姚建可) and Wen-Sen Zhong(钟文森). Chin. Phys. B, 2023, 32(1): 018101.
[3]	Slight Co-doping tuned magnetic and electric properties on cubic BaFeO₃ single crystal Shijun Qin(覃湜俊), Bowen Zhou(周博文), Zhehong Liu(刘哲宏), Xubin Ye(叶旭斌), Xueqiang Zhang(张雪强), Zhao Pan(潘昭), and Youwen Long(龙有文). Chin. Phys. B, 2022, 31(9): 097503.
[4]	Radiation effects of 50-MeV protons on PNP bipolar junction transistors Yuan-Ting Huang(黄垣婷), Xiu-Hai Cui(崔秀海), Jian-Qun Yang(杨剑群), Tao Ying(应涛), Xue-Qiang Yu(余雪强), Lei Dong(董磊), Wei-Qi Li(李伟奇), and Xing-Ji Li(李兴冀). Chin. Phys. B, 2022, 31(2): 028502.
[5]	Electron tunneling through double-electric barriers on HgTe/CdTe heterostructure interface Liang-Zhong Lin(林亮中), Yi-Yun Ling(凌艺纭), Dong Zhang(张东), and Zhen-Hua Wu(吴振华). Chin. Phys. B, 2022, 31(11): 117201.
[6]	Recombination-induced voltage-dependent photocurrent collection loss in CdTe thin film solar cell Ling-Ling Wu(吴玲玲), Guang-Wei Wang(王光伟), Juan Tian(田涓), Dong-Ming Wang(王东明), and De-Liang Wang(王德亮). Chin. Phys. B, 2022, 31(10): 108803.
[7]	Achieving high-performance multilayer MoSe₂ photodetectors by defect engineering Jintao Hong(洪锦涛), Fengyuan Zhang(张丰源), Zheng Liu(刘峥), Jie Jiang(蒋杰), Zhangting Wu(吴章婷), Peng Zheng(郑鹏), Hui Zheng(郑辉), Liang Zheng(郑梁), Dexuan Huo(霍德璇), Zhenhua Ni(倪振华), and Yang Zhang(张阳). Chin. Phys. B, 2021, 30(8): 087801.
[8]	Characterization of low-resistance ohmic contacts to heavily carbon-doped n-type InGaAsBi films treated by rapid thermal annealing Shu-Xing Zhou(周书星), Li-Kun Ai(艾立鹍), Ming Qi(齐鸣), An-Huai Xu(徐安怀), Jia-Sheng Yan(颜家圣), Shu-Sen Li(李树森), and Zhi Jin(金智). Chin. Phys. B, 2021, 30(2): 027304.
[9]	Suppression of ion migration in perovskite materials by pulse-voltage method Xue-Yan Wang(王雪岩), Hu Wang(王虎), Luo-Ran Chen(陈烙然), Yu-Chuan Shao(邵宇川), and Jian-Da Shao(邵建达). Chin. Phys. B, 2021, 30(11): 118104.
[10]	Understanding of impact of carbon doping on background carrier conduction in GaN Zhenxing Liu(刘振兴), Liuan Li(李柳暗), Jinwei Zhang(张津玮), Qianshu Wu(吴千树), Yapeng Wang(王亚朋), Qiuling Qiu(丘秋凌), Zhisheng Wu(吴志盛), and Yang Liu(刘扬). Chin. Phys. B, 2021, 30(10): 107201.
[11]	Electrical properties of m×n cylindrical network Zhi-Zhong Tan(谭志中), Zhen Tan(谭震). Chin. Phys. B, 2020, 29(8): 080503.
[12]	Influence of Zr₅₀Cu₅₀ thin film metallic glass as buffer layer on the structural and optoelectrical properties of AZO films Bao-Qing Zhang(张宝庆), Gao-Peng Liu(刘高鹏), Hai-Tao Zong(宗海涛), Li-Ge Fu(付丽歌), Zhi-Fei Wei(魏志飞), Xiao-Wei Yang(杨晓炜), Guo-Hua Cao(曹国华). Chin. Phys. B, 2020, 29(3): 037303.
[13]	Development of small pixel HgCdTe infrared detectors Ming Liu(刘铭), Cong Wang(王丛), Li-Qing Zhou(周立庆). Chin. Phys. B, 2019, 28(3): 037804.
[14]	Optical characterization of defects in narrow-gap HgCdTe for infrared detector applications Fang-Yu Yue(越方禹), Su-Yu Ma(马骕驭), Jin Hong(洪进), Ping-Xiong Yang(杨平雄), Cheng-Bin Jing(敬承斌), Ye Chen(陈晔), Jun-Hao Chu(褚君浩). Chin. Phys. B, 2019, 28(1): 017104.
[15]	Structural and electrical properties of carbon-ion-implanted ultrananocrystalline diamond films Hui Xu(徐辉), Jian-Jun Liu(刘建军), Hai-Tao Ye(叶海涛), D J Coathup, A V Khomich, Xiao-Jun Hu(胡晓君). Chin. Phys. B, 2018, 27(9): 096104.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Electronic properties and deep level transient spectroscopy of CdS/CdTe thin film solar cells

Cite this article:

Online attention