Novel model of a AlGaN/GaN high electron mobility transistor based on an artificial neural network

doi:10.1088/1674-1056/20/3/036106

Abstract In this paper we present a novel approach to modeling AlGaN/GaN high electron mobility transistor (HEMT) with an artificial neural network (ANN). The AlGaN/GaN HEMT device structure and its fabrication process are described. The circuit-based Neuro-space mapping (neuro-SM) technique is studied in detail. The EEHEMT model is implemented according to the measurement results of the designed device, which serves as a coarse model. An ANN is proposed to model AlGaN/GaN HEMT based on the coarse model. Its optimization is performed. The simulation results from the model are compared with the measurement results. It is shown that the simulation results obtained from the ANN model of AlGaN/GaN HEMT are more accurate than those obtained from the EEHEMT model.

Keywords: AlGaN/GaN high electron mobility transistor modeling artificial neural network

Received: 30 August 2010
Revised: 18 October 2010
Accepted manuscript online:

PACS:	61.72.uj	(III-V and II-VI semiconductors)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	07.05.Tp	(Computer modeling and simulation)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60776052).

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Cheng Zhi-Qun(程知群), Hu Sha(胡莎), Liu Jun(刘军), and Zhang Qi-Jun Novel model of a AlGaN/GaN high electron mobility transistor based on an artificial neural network 2011 Chin. Phys. B 20 036106

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Novel model of a AlGaN/GaN high electron mobility transistor based on an artificial neural network

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