Chin. Phys. B
Citation Search Quick Search
Chin. Phys. B  2011, Vol. 20 Issue (3): 033301    DOI: 10.1088/1674-1056/20/3/033301
ATOMIC AND MOLECULAR PHYSICS Current Issue| Next Issue| Archive| Adv Search |
Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement
Li Xi-Guanga, Wang Zhan-Guob, Zeng Yi-Pingc, Sun Guo-Shengd, Liu Xing-Fang5, Wu Hai-Lei5, Yan Guo-Guo5, Dong Lin5, Zheng Liu5, Zhao Wan-Shun5, Wang Lei5
a Dongguan Tianyu Semiconductor, Inc., Dongguan 523000, China; b Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; c Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; d Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Dongguan Tianyu Semiconductor, Inc., Dongguan 523000, China; (5)Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Copyright © the Chinese Physical Society
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn