Chin. Phys. B
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Chin. Phys. B  2011, Vol. 20 Issue (2): 027303    DOI: 10.1088/1674-1056/20/2/027303
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Enhancement-mode AlGaN/GaN high electronic mobility transistors with thin barrier
Quan Sia, Yang Li-Yuana, Yang Linga, Wang Haoa, Zhang Jin-Chenga, Hao Yuea, Yu Hui-Youb, Pan Cai-Yuanb, Ma Xiao-Huac
a Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Physics Technology, Xidian University, Xi'an 710071, China; b School of Technical Physics, Xidian University, Xi'an 710071, China; c School of Technical Physics, Xidian University, Xi'an 710071, China; Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Physics Technology, Xidian University, Xi'an 710071, China

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