Electron tunneling in single layer graphene with an energy gap

doi:10.1088/1674-1056/20/2/027201

Abstract When a single layer graphene is epitaxially grown on silicon carbide, it will exhibit a finite energy gap like a conventional semiconductor, and its energy dispersion is no longer linear in momentum in the low energy regime. In this paper, we have investigated the tunneling characteristics through a two-dimensional barrier in a single layer graphene with an energy gap. It is found that when the electron is at a zero angle of incidence, the transmission probability as a function of incidence energy has a gap. Away from the gap the transmission coefficient oscillates with incidence energy which is analogous to that of a conventional semiconductor. The conductance under zero temperature has a gap. The properties of electron transmission may be useful for developing graphene-based nano-electronics.

Keywords: graphene transmission

Received: 13 May 2010
Revised: 08 October 2010
Accepted manuscript online:

PACS:	72.10.Bg	(General formulation of transport theory)
	73.23.Ad	(Ballistic transport)
	73.63.Rt	(Nanoscale contacts)

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Xu Xu-Guang(徐旭光), Zhang Chao(张潮), Xu Gong-Jie(徐公杰), and Cao Jun-Cheng(曹俊诚) Electron tunneling in single layer graphene with an energy gap 2011 Chin. Phys. B 20 027201

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