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Chin. Phys. B, 2011, Vol. 20(2): 027101    DOI: 10.1088/1674-1056/20/2/027101
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Novel high-voltage power device based on self-adaptive interface charge

Wu Li-Juan(吴丽娟)a)b)†, Hu Sheng-Dong(胡盛东)c), Zhang Bo(张波)a), and Li Zhao-Ji(李肇基)a)
a State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China; b College of Communication Engineering, Chengdu University of Information Technology, Chengdu 610225, China; c College of Communication Engineering, Chongqing University, Chongqing 400044, China
Abstract  This paper presents a novel high-voltage lateral double diffused metal–oxide semiconductor (LDMOS) with self-adaptive interface charge (SAC) layer and its physical model of the vertical interface electric field. The SAC can be self-adaptive to collect high concentration dynamic inversion holes, which effectively enhance the electric field of dielectric buried layer (EI) and increase breakdown voltage (BV). The BV and EI of SAC LDMOS increase to 612 V and 600 V/μm from 204 V and 90.7 V/μm of the conventional silicon-on-insulator, respectively. Moreover, enhancement factors of η which present the enhanced ability of interface charge on EI are defined and analysed.
Keywords:  self-adaptive interface charge      inversion holes      dielectric layer electric field      breakdown voltage  
Received:  26 August 2010      Revised:  19 September 2010      Accepted manuscript online: 
PACS:  71.10.-w (Theories and models of many-electron systems)  
  73.20.-r (Electron states at surfaces and interfaces)  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  77.20.Jp  
Fund: Projects supported by the National Natural Science Foundation of China (Grant Nos. 60806025 and 60976060), the National Laboratory of Analog Integrated Circuit (Grant No. 9140C0903070904), and the Youth Teacher Foundation of the University of Electronic Science and Technology of China (Grant No. jx0721).

Cite this article: 

Wu Li-Juan(吴丽娟), Hu Sheng-Dong(胡盛东), Zhang Bo(张波), and Li Zhao-Ji(李肇基) Novel high-voltage power device based on self-adaptive interface charge 2011 Chin. Phys. B 20 027101

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