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Chin. Phys. B, 2011, Vol. 20(12): 127503    DOI: 10.1088/1674-1056/20/12/127503
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Effects of notches on the order of flux-closure state formation in bi-rings by micromagnetic simulation

He Shu-Ting(何淑婷), Chang Shuang-Quan(常双全), and Shi Hui-Gang(史慧刚)
Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, China
Abstract  The effects of the number and the location of notches on the formation of flux-closure states in bi-rings with fields applied in the x direction (i.e., along the short axis direction of bi-rings) and y direction (i.e., along the long axis direction of bi-rings) are investigated using micromagnetic simulation. For the bi-rings with one notch and the bi-rings with two notches symmetric about y axis, the order of flux-closure state formation in each ring can be controlled. But the flux-closure state forms simultaneously in each ring for the bi-rings with two notches symmetric about x axis. For the bi-rings with two notches that are symmetric neither about x axis nor about y axis, only one ring can form a flux-closure state in the y-direction field and no flux-closure state can be found in rings in the x-direction field. Therefore, logic states can be defined by controlling the order of flux-closure state formation, which can be utilized in future logic devices.
Keywords:  notch(es)      the order flux-closure state formation      micromagnetic simulation  
Received:  13 May 2011      Revised:  25 July 2011      Accepted manuscript online: 
PACS:  75.70.Kw (Domain structure (including magnetic bubbles and vortices))  
  75.78.Cd (Micromagnetic simulations ?)  
  75.40.Mg (Numerical simulation studies)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 50801033).

Cite this article: 

He Shu-Ting(何淑婷), Chang Shuang-Quan(常双全), and Shi Hui-Gang(史慧刚) Effects of notches on the order of flux-closure state formation in bi-rings by micromagnetic simulation 2011 Chin. Phys. B 20 127503

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