Please wait a minute...
Chin. Phys. B, 2011, Vol. 20(12): 127306    DOI: 10.1088/1674-1056/20/12/127306
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition

Le Ling-Cong(乐伶聪)a), Zhao De-Gang(赵德刚)a), Wu Liang-Liang(吴亮亮)a), Deng Yi(邓懿)a), Jiang De-Sheng(江德生)a), Zhu Jian-Jun(朱建军)a), Liu Zong-Shun(刘宗顺)a), Wang Hui(王辉)a), Zhang Shu-Ming(张书明)a),Zhang Bao-Shun(张宝顺)b), and Yang Hui(杨辉)a)b)
a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; b Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China;
Abstract  In situ optical reflectivity measurements are employed to monitor the GaN epilayer growth process above a low-temperature GaN buffer layer on a c-plane sapphire substrate by metalorganic chemical vapour deposition. It is found that the lateral growth of the GaN islands and their coalescence are promoted in the initial growth stage if optimized nitridation time and temperature are selected when the substrate is pre-exposed to ammonia. As confirmed by atomic force microscopy observations, the quality of the GaN epilayers is closely dependent on the surface morphology of the nitridated buffer layer, especially grain size and nucleation density.
Keywords:  X-ray diffraction      metalorganic chemical vapour deposition      nitrides  
Received:  03 May 2011      Revised:  27 June 2011      Accepted manuscript online: 
PACS:  73.61.Ey (III-V semiconductors)  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  61.05.cp (X-ray diffraction)  
Fund: Project supported by the National Natural Science Foundation for Distinguished Young Scholars of China (Grant No. 60925017), the National Natural Science Foundation of China (Grant Nos. 10990100, 60836003, and 60776047), the National Basic Research Program of China (Grant No. 2007CB936700), and the National High Technology Research and Development Program of China (Grant No. 2007AA03Z401).

Cite this article: 

Le Ling-Cong(乐伶聪), Zhao De-Gang(赵德刚), Wu Liang-Liang(吴亮亮), Deng Yi(邓懿), Jiang De-Sheng(江德生), Zhu Jian-Jun(朱建军), Liu Zong-Shun(刘宗顺), Wang Hui(王辉), Zhang Shu-Ming(张书明), Zhang Bao-Shun(张宝顺), and Yang Hui(杨辉) The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition 2011 Chin. Phys. B 20 127306

[1] Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Sugimoto Y and Kiyoku H 1996 Appl. Phys. Lett. 69 4056
[2] Zhao D G, Zhang S, Liu W B, Hao X P, Jiang D S, Zhu J J, Liu Z S, Wang H, Zhang S M, Yang H and Wei L 2010 Chin. Phys. B 19 057802
[3] Ji L, Jiang D S, Zhang S M, Liu Z S, Zeng C, Zhao D G, Zhu J J, Wang H, Duan L H and Yang H 2010 Chin. Phys. B 19 124211
[4] Maruska H and Tietjen J 1969 Appl. Phys. Lett. 15 327
[5] Ilegems M and Montgomery H 1973 J. Phys. Chem. Solids 34 885
[6] Shintani A and Minagawa S 1974 J. Cryst. Growth 22 1
[7] Jacob G, Boulou M and Furtado M 1977 J. Cryst. Growth 42 136
[8] Manasevit H 1972 J. Cryst. Growth 13 306
[9] Andrews J and Littlejohn M 1975 J. Electrochem. Soc. 122 1273
[10] Nakamura S 1991 Jpn. J. Appl. Phys. 30 L1705
[11] Keller S, Keller B, Wu Y, Heying B, Kapolnek D, Speck J, Mishra U and DenBaars S 1996 Appl. Phys. Lett. 68 1525
[12] Hwang C, Schurman M, Mayo W, Li Y, Lu Y, Liu H, Salagaj T and Stall R 1995 J. Vac. Sci. Technol. A 13 672
[13] Uchida K, Watanabe A, Yano F, Kouguchi M, Tanaka T and Minagawa S 1996 J. Appl. Phys. bf79 3487
[14] Grandjean N, Massies J and Leroux M 1996 Appl. Phys. Lett. 69 2071
[15] Yamamoto A, Tsujino M, Ohkubo M and Hashimoto A 1994 J. Cryst. Growth 137 415
[16] Fuke S, Teshigawara H, Kuwahara K, Takano Y, Ito T, Yanagihara M and Ohtsuka K 1998 J. Appl. Phys. 83 764
[17] Sumiya M and Fuke S 2005 Appl. Surf. Sci. 244 269
[1] Gamma induced changes in Makrofol/CdSe nanocomposite films
Ali A. Alhazime, M. ME. Barakat, Radiyah A. Bahareth, E. M. Mahrous,Saad Aldawood, S. Abd El Aal, and S. A. Nouh. Chin. Phys. B, 2022, 31(9): 097802.
[2] Characterization of the N-polar GaN film grown on C-plane sapphire and misoriented C-plane sapphire substrates by MOCVD
Xiaotao Hu(胡小涛), Yimeng Song(宋祎萌), Zhaole Su(苏兆乐), Haiqiang Jia(贾海强), Wenxin Wang(王文新), Yang Jiang(江洋), Yangfeng Li(李阳锋), and Hong Chen(陈弘). Chin. Phys. B, 2022, 31(3): 038103.
[3] Epitaxy of III-nitrides on two-dimensional materials and its applications
Yu Xu(徐俞), Jianfeng Wang(王建峰), Bing Cao(曹冰), and Ke Xu(徐科). Chin. Phys. B, 2022, 31(11): 117702.
[4] Equal compressibility structural phase transition of molybdenum at high pressure
Lun Xiong(熊伦), Bin Li(李斌), Fang Miao(苗芳), Qiang Li (李强), Guangping Chen(陈光平), Jinxia Zhu(竹锦霞), Yingchun Ding(丁迎春), and Duanwei He(贺端威). Chin. Phys. B, 2022, 31(11): 116102.
[5] Pressure-induced phase transition in transition metal trifluorides
Peng Liu(刘鹏), Meiling Xu(徐美玲), Jian Lv(吕健), Pengyue Gao(高朋越), Chengxi Huang(黄呈熙), Yinwei Li(李印威), Jianyun Wang(王建云), Yanchao Wang(王彦超), and Mi Zhou(周密). Chin. Phys. B, 2022, 31(10): 106104.
[6] Origin of the low formation energy of oxygen vacancies in CeO2
Han Xu(许涵), Tongtong Shang(尚彤彤), Xuefeng Wang(王雪锋), Ang Gao(高昂), and Lin Gu(谷林). Chin. Phys. B, 2022, 31(10): 107102.
[7] Ultrafast structural dynamics using time-resolved x-ray diffraction driven by relativistic laser pulses
Chang-Qing Zhu(朱常青), Jun-Hao Tan(谭军豪), Yu-Hang He(何雨航), Jin-Guang Wang(王进光), Yi-Fei Li(李毅飞), Xin Lu(鲁欣), Ying-Jun Li(李英骏), Jie Chen(陈洁), Li-Ming Chen(陈黎明), and Jie Zhang(张杰). Chin. Phys. B, 2021, 30(9): 098701.
[8] Powder x-ray diffraction and Rietveld analysis of (C2H5NH3)2CuCl4
Yi Liu(刘义), Jun Shen(沈俊), Zunming Lu(卢遵铭), Baogen Shen(沈保根), and Liqin Yan(闫丽琴). Chin. Phys. B, 2021, 30(6): 067502.
[9] Low thermal expansion and broad band photoluminescence of Zr0.1Al1.9Mo2.9V0.1O12
Jun-Ping Wang(王俊平), Qing-Dong Chen(陈庆东), Li-Gang Chen(陈立刚), Yan-Jun Ji(纪延俊), You-Wen Liu(刘友文), and Er-Jun Liang(梁二军). Chin. Phys. B, 2021, 30(3): 036501.
[10] Comparison of resonant tunneling diodes grown on freestanding GaN substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy
Xiang-Peng Zhou(周祥鹏), Hai-Bing Qiu(邱海兵), Wen-Xian Yang(杨文献), Shu-Long Lu(陆书龙), Xue Zhang(张雪), Shan Jin(金山), Xue-Fei Li(李雪飞), Li-Feng Bian(边历峰), and Hua Qin(秦华). Chin. Phys. B, 2021, 30(12): 127301.
[11] Analytical solution of crystal diffraction intensity
Wan-Li Shang(尚万里), Ao Sun(孙奥), Hua-Bin Du(杜华冰), Guo-Hong Yang(杨国洪), Min-Xi Wei(韦敏习), Xu-Fei Xie(谢旭飞), Xing-Sen Che(车兴森), Li-Fei Hou(侯立飞), Wen-Hai Zhang(张文海), Miao Li(黎淼), Jun Shi(施军), Feng Wang(王峰), Hai-En He(何海恩), Jia-Min Yang(杨家敏), Shao-En Jiang(江少恩), and Bao-Han Zhang(张保汉). Chin. Phys. B, 2021, 30(11): 116101.
[12] Investigations on ion implantation-induced strain in rotated Y-cut LiNbO3 and LiTaO3
Zhongxu Li(李忠旭), Kai Huang(黄凯), Yanda Ji(吉彦达), Yang Chen(陈阳), Xiaomeng Zhao(赵晓蒙), Min Zhou(周民), Tiangui You(游天桂), Shibin Zhang(张师斌), and Xin Ou(欧欣). Chin. Phys. B, 2021, 30(10): 106103.
[13] Isostructural phase transition-induced bulk modulus multiplication in dopant-stabilized ZrO2 solid solution
Min Wang(王敏), Wen-Shu Shen(沈文舒), Xiao-Dong Li(李晓东), Yan-Chun Li(李延春), Guo-Zhao Zhang(张国召), Cai-Long Liu(刘才龙), Lin Zhao(赵琳), Shu-Peng Lv(吕舒鹏), Chun-Xiao Gao(高春晓), Yong-Hao Han(韩永昊). Chin. Phys. B, 2019, 28(7): 076109.
[14] Characterization of structural transitions and lattice dynamics of hybrid organic-inorganic perovskite CH3NH3PbI3
Feng Jin(金峰), Jian-Ting Ji(籍建葶), Chao Xie(谢超), Yi-Meng Wang(王艺朦), Shu-Na He(贺淑娜), Lei Zhang(张磊), Zhao-Rong Yang(杨昭荣), Feng Yan(严锋), Qing-Ming Zhang(张清明). Chin. Phys. B, 2019, 28(7): 076102.
[15] Semiconductor-metal transition in GaAs nanowires under high pressure
Yi-Lan Liang(梁艺蓝), Zhen Yao(姚震), Xue-Tong Yin(殷雪彤), Peng Wang(王鹏), Li-Xia Li(李利霞), Dong Pan(潘东), Hai-Yan Li(李海燕), Quan-Jun Li(李全军), Bing-Bing Liu(刘冰冰), Jian-Hua Zhao(赵建华). Chin. Phys. B, 2019, 28(7): 076401.
No Suggested Reading articles found!