Simulation study of a mixed terminal structure for 4H-SiC merged PiN/Schottky diode

doi:10.1088/1674-1056/20/11/118401

Abstract In this paper, a mixed terminal structure for the 4H-SiC merged PiN/Schottky diode (MPS) is investigated, which is a combination of a field plate, a junction termination extension and floating limiting rings. Optimization is performed on the terminal structure by using the ISE-TCAD. Further analysis shows that this structure can greatly reduce the sensitivity of the breakdown voltage to the doping concentration and can effectively suppress the effect of the interface charge compared with the structure of the junction termination extension. At the same time, the 4H-SiC MPS with this termination structure can reach a high and stable breakdown voltage.

Keywords: 4H-SiC merged PiN/Schottky diode junction termination technology breakdown voltage

Received: 03 September 2010
Revised: 26 June 2011
Accepted manuscript online:

PACS:	84.30.Jc	(Power electronics; power supply circuits)
	85.30.Kk	(Junction diodes)
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.Mn	(Junction breakdown and tunneling devices (including resonance tunneling devices))

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61006060) and the Shaanxi Provincial 13115 Innovation Engineering, China (Grant No. 2008ZDKG-30).

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Huang Jian-Hua(黄健华), Lü Hong-Liang(吕红亮), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门),Tang Xiao-Yan(汤晓燕), Chen Feng-Ping(陈丰平), and Song Qing-Wen(宋庆文) Simulation study of a mixed terminal structure for 4H-SiC merged PiN/Schottky diode 2011 Chin. Phys. B 20 118401

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Simulation study of a mixed terminal structure for 4H-SiC merged PiN/Schottky diode

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