High temperature characteristics of AlGaN/GaN high electron mobility transistors

doi:10.1088/1674-1056/20/11/117302

Abstract Direct current (DC) and pulsed measurements are performed to determine the degradation mechanisms of AlGaN/GaN high electron mobility transistors (HEMTs) under high temperature. The degradation of the DC characteristics is mainly attributed to the reduction in the density and the mobility of the two-dimensional electron gas (2DEG). The pulsed measurements indicate that the trap assisted tunneling is the dominant gate leakage mechanism in the temperature range of interest. The traps in the barrier layer become active as the temperature increases, which is conducive to the electron tunneling between the gate and the channel. The enhancement of the tunneling results in the weakening of the current collapse effects, as the electrons trapped by the barrier traps can escape more easily at the higher temperature.

Keywords: AlGaN/GaN high electron mobility transistor high temperature characteristics traps current collapse

Received: 25 May 2011
Revised: 11 July 2011
Accepted manuscript online:

PACS:	73.61.Ey	(III-V semiconductors)
	85.30.Tv	(Field effect devices)

Cite this article:

Yang Li-Yuan(杨丽媛), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Zhang Jin-Cheng(张进成), Pan Cai-Yuan(潘才渊), Ma Ji-Gang (马骥刚), Zhang Kai(张凯), and Ma Ping(马平) High temperature characteristics of AlGaN/GaN high electron mobility transistors 2011 Chin. Phys. B 20 117302

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High temperature characteristics of AlGaN/GaN high electron mobility transistors

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