Please wait a minute...
Chin. Phys. B, 2011, Vol. 20(11): 116801    DOI: 10.1088/1674-1056/20/11/116801
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Growth and properties of wide spectral white light emitting diodes

Xie Zi-Li(谢自力), Zhang Rong(张荣), Fu De-Yi(傅德颐), Liu Bin(刘斌),Xiu Xiang-Qian(修向前), Hua Xue-Mei(华雪梅), Zhao Hong(赵红), Chen Peng(陈鹏),Han Ping(韩平), Shi Yi(施毅), and Zheng You-Dou(郑有炓)
School of Electronics and Engineering, Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China
Abstract  Wide spectral white light emitting diodes have been designed and grown on a sapphire substrate by using a metal-organic chemical vapor deposition system. Three quantum wells with blue-light-emitting, green-light-emitting and red-light-emitting structures were grown according to the design. The surface morphology of the film was observed by using atomic force microscopy. The films were characterized by their photoluminescence measurements. X-ray diffraction θ/2θ scan spectroscopy was carried out on the multi-quantum wells. The secondary fringes of the symmetric ω/2θ X-ray diffraction scan peaks indicate that the thicknesses and the alloy compositions of the individual quantum wells are repeatable throughout the active region. The room temperature photoluminescence spectra of the structures indicate that the white light emission of the multi-quantum wells is obtained. The light spectrum covers 400-700 nm, which is almost the whole visible light spectrum.
Keywords:  metal-organic chemical vapor deposition      GaN/InGaN multi-quantum wells      group III-V semiconductor      wide spectral white light  
Received:  29 November 2010      Revised:  06 July 2011      Accepted manuscript online: 
PACS:  68.43.Jk (Diffusion of adsorbates, kinetics of coarsening and aggregation)  
  66.30.H- (Self-diffusion and ionic conduction in nonmetals)  
  68.37.Hk (Scanning electron microscopy (SEM) (including EBIC))  
  68.55.A- (Nucleation and growth)  
Fund: Project supported by the Special Funds for Major State Basic Research Project, China (Grant No. 2011CB301900), the Hi-tech Research Project, China (Grant No. 2009AA03A198), the National Natural Science Foundation of China (Grant Nos. 60990311, 60721063, 60906025, 60936004, 60731160628, and 60820106003), the Nature Science Foundation of Jiangsu Province, China (Grant Nos. BK2008019, BK2010385, BK2009255, and BK2010178), and the Research Funds from NJU-Yangzhou Institute of Opto-electronics, China.

Cite this article: 

Xie Zi-Li(谢自力), Zhang Rong(张荣), Fu De-Yi(傅德颐), Liu Bin(刘斌),Xiu Xiang-Qian(修向前), Hua Xue-Mei(华雪梅), Zhao Hong(赵红), Chen Peng(陈鹏),Han Ping(韩平), Shi Yi(施毅), and Zheng You-Dou(郑有炓) Growth and properties of wide spectral white light emitting diodes 2011 Chin. Phys. B 20 116801

[1] Naka-mura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Sugimoto Y and Kiyoku H 1997 Jpn. J. Appl. Phys. bf36 L1059
[2] Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Mat-sushita T, Kiyoku H, Sugimoto Y, Kozaki T, Umemoto H, Sano M and Chocho K 1997 Jpn. J. Appl. Phys. bf36 L1568
[3] Park I K and Kim J Y 2008 Appl. Phys. Lett. bf92 091110
[4] Xie Z L, Zhang R, Xia C T, Xiu X Q, Han P, Liu B, Zhao H, Jiang R L, Shi Y and Zheng Y D 2008 Chin. Phys. Lett. bf25 2185
[5] Xie Z L, Zhang R, Han P, Zhou S M, Liu B, Xiu X Q, Chen P, Shi Y and Zheng Y D 2008 Chin. Phys. Lett. bf25 2614
[6] Shei S C, Sheu J K, Tsai C M, Lai W C, Lee M L and Kuo C H 2006 Jpn. J. Appl. Phys. 45 2463
[7] Xie Z L, Zhang R, Xiu X Q, Han P, Liu B, Chen L, Yu H Q, Jiang R L, Shi Y and Zheng Y D 2007 Acta Phys. Sin. bf56 6717 (in Chinese)
[1] Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process
Jingshu Guo(郭静姝), Jiejie Zhu(祝杰杰), Siyu Liu(刘思雨), Jielong Liu(刘捷龙), Jiahao Xu(徐佳豪), Weiwei Chen(陈伟伟), Yuwei Zhou(周雨威), Xu Zhao(赵旭), Minhan Mi(宓珉瀚), Mei Yang(杨眉), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2023, 32(3): 037303.
[2] Characterization of the N-polar GaN film grown on C-plane sapphire and misoriented C-plane sapphire substrates by MOCVD
Xiaotao Hu(胡小涛), Yimeng Song(宋祎萌), Zhaole Su(苏兆乐), Haiqiang Jia(贾海强), Wenxin Wang(王文新), Yang Jiang(江洋), Yangfeng Li(李阳锋), and Hong Chen(陈弘). Chin. Phys. B, 2022, 31(3): 038103.
[3] High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped β-Ga2O3 thin film
Yu-Song Zhi(支钰崧), Wei-Yu Jiang(江为宇), Zeng Liu(刘增), Yuan-Yuan Liu(刘媛媛), Xu-Long Chu(褚旭龙), Jia-Hang Liu(刘佳航), Shan Li(李山), Zu-Yong Yan(晏祖勇), Yue-Hui Wang(王月晖), Pei-Gang Li(李培刚), Zhen-Ping Wu(吴真平), and Wei-Hua Tang(唐为华). Chin. Phys. B, 2021, 30(5): 057301.
[4] Continuous-wave operation of InAs/InP quantum dot tunable external-cavity laser grown by metal-organic chemical vapor deposition
Yan Wang(王岩), Shuai Luo(罗帅), Haiming Ji(季海铭), Di Qu(曲迪), and Yidong Huang(黄翊东). Chin. Phys. B, 2021, 30(1): 018106.
[5] Short-wavelength infrared InAs/GaSb superlattice hole avalanche photodiode
Jia-Feng Liu(刘家丰), Ning-Tao Zhang(张宁涛), Yan Teng(滕), Xiu-Jun Hao(郝修军), Yu Zhao(赵宇), Ying Chen(陈影), He Zhu(朱赫), Hong Zhu(朱虹), Qi-Hua Wu(吴启花), Xin Li(李欣), Bai-Le Chen(陈佰乐)§, and Yong Huang(黄勇). Chin. Phys. B, 2020, 29(11): 117301.
[6] Hetero-epitaxy of Lg=0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications
Huang Jie (黄杰), Li Ming (黎明), Zhao Qian (赵倩), Gu Wen-Wen (顾雯雯), Lau Kei-May (刘纪美). Chin. Phys. B, 2015, 24(8): 087305.
[7] Normally-off metamorphic AlInAs/AlInAs HEMTs on Si substrates grown by MOCVD
Huang Jie (黄杰), Li Ming (黎明), Lau Kei-May (刘纪美). Chin. Phys. B, 2015, 24(7): 078102.
[8] Effect of pressure on the semipolar GaN (10-11) growth mode on patterned Si substrates
Liu Jian-Ming (刘建明), Zhang Jie (张洁), Lin Wen-Yu (林文禹), Ye Meng-Xin (叶孟欣), Feng Xiang-Xu (冯向旭), Zhang Dong-Yan (张东炎), Steve Ding, Xu Chen-Ke (徐宸科), Liu Bao-Lin (刘宝林). Chin. Phys. B, 2015, 24(5): 057801.
[9] High-crystalline GaSb epitaxial films grown on GaAs(001) substrates by low-pressure metal-organic chemical vapor deposition
Wang Lian-Kai (王连锴), Liu Ren-Jun (刘仁俊), Lü You (吕游), Yang Hao-Yu (杨皓宇), Li Guo-Xing (李国兴), Zhang Yuan-Tao (张源涛), Zhang Bao-Lin (张宝林). Chin. Phys. B, 2015, 24(1): 018102.
[10] Improvement in a-plane GaN crystalline quality using wet etching method
Cao Rong-Tao (曹荣涛), Xu Sheng-Rui (许晟瑞), Zhang Jin-Cheng (张进成), Zhao Yi (赵一), Xue Jun-Shuai (薛军帅), Ha Wei (哈微), Zhang Shuai (张帅), Cui Pei-Shui (崔培水), Wen Hui-Juan (温慧娟), Chen Xing (陈兴). Chin. Phys. B, 2014, 23(4): 047804.
[11] Mid-gap photoluminescence and magnetic properties of GaMnN films grown by metal-organic chemical vapor deposition
Xing Hai-Ying (邢海英), Xu Zhang-Cheng (徐章程), Cui Ming-Qi (崔明启), Xie Yu-Xin (谢玉芯), Zhang Guo-Yi (张国义). Chin. Phys. B, 2014, 23(10): 107803.
[12] Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content
Zhao Bi-Jun (赵璧君), Chen Xin (陈鑫), Ren Zhi-Wei (任志伟), Tong Jin-Hui (童金辉), Wang Xing-Fu (王幸福), Li Dan-Wei (李丹伟), Zhuo Xiang-Jing (卓祥景), Zhang Jun (章俊), Yi Han-Xiang (易翰翔), Li Shu-Ti (李述体). Chin. Phys. B, 2013, 22(8): 088401.
[13] Growth and characterization of GaAs/InxGa1-xAs/GaAs axial nanowire heterostructures with symmetrical heterointerfaces
Lü Xiao-Long (吕晓龙), Zhang Xia (张霞), Liu Xiao-Long (刘小龙), Yan Xin (颜鑫), Cui Jian-Gong (崔建功), Li Jun-Shuai (李军帅), Huang Yong-Qing (黄永清), Ren Xiao-Min (任晓敏). Chin. Phys. B, 2013, 22(6): 066101.
[14] Study on the relationships between Raman shifts and temperature range for a-plane GaN using temperature-dependent Raman scattering
Wang Dang-Hui (王党会), Xu Sheng-Rui (许晟瑞), Hao Yue (郝跃), Zhang Jin-Cheng (张进成), Xu Tian-Han (许天旱), Lin Zhi-Yu (林志宇), Zhou Hao (周昊), Xue Xiao-Yong (薛晓咏 ). Chin. Phys. B, 2013, 22(2): 028101.
No Suggested Reading articles found!